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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：清华大学
学位：博士
所在单位：控制科学与工程学院
学科：微电子学与固体电子学. 凝聚态物理. 控制理论与控制工程
电子邮箱：dwang121@dlut.edu.cn
扫描关注
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- [284]Wei, Tiwei, Li, Yinan, Wang, Dejun, Tao, Cai, Jian, Qian, Liu, Ziyu.A 3D Integration Testing Vehicle with TSV Interconnects[A],2012
- [285]Bingbing Liu, 刘冰冰, Lingqin Huang, 黄玲琴, Qiaozhi Zhu, 朱巧智, Dejun Wang, 王德君.SiC表面氢等离子体处理对MOS界面电学特性影响[A],2012,511-514
- [286]李轶楠, 蔡坚, 王德君, 王谦, 魏体伟.硅通孔电镀铜填充工艺优化研究[J],电子工业专用设备,2012,41(10):6-10
- [287]Jiang, Y., Wang, Q.P., Tamai, K., Miyashita, T., Motoyama, S., D.J., Ao, J.P., Ohno.GaN MOSFET with boron trichloride-based dry recess process[J],Journal of Physics: Conference Series,2012,441(1)
- [288]Wei, Tiwei, Cai, Jian, Wang, Qian, Liu, Ziyu, Li, Yinan, Tao, Dejun.Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (TSV)[A],2012,482-486
- [289]Huang H., Qin H., Hu Y., Wang D., Li W., Xu Y., Wang, D., School of Electronic Science, Technology, Faculty of Electronic Information, Electronic Engineering, Dalian University of Technology, Dalian 116024, China, email: dwang121@dlut.edu.cn.A simplified compact model of miniaturized cross-shaped CMOS integrated Hall devices[J],Journal of Semiconductors,2012,33(8)
- [290]Huang, Lingqin, Zhu, Qiaozhi, Gao, Mingchao, Wang, Dejun, Qin, Fuwen, LQ (reprint author), Dalian Univ Technol, Sch Elect Sci & Technol, Fac Elect Informat & Elect Engn, Dalian 116024, Peoples R China..Effects of Low Temperature Electronic Cyclotron Resonance Hydrogen Plasma Treatment and Anneali...[J],JAPANESE JOURNAL OF APPLIED PHYSICS,2012,51(8)
- [291]Huang, Lingqin, Liu, Bingbing, Zhu, Qiaozhi, Chen, Suhua, Gao, Mingchao, Qin, Fuwen, Wang, Dejun, LQ (reprint author), Dalian Univ Technol, Sch Elect Sci & Technol, Fac Elect Informat & Elect Engn, Dalian 116024, Peoples R China..Low resistance Ti Ohmic contacts to 4H-SiC by reducing barrier heights without high temperature...[J],APPLIED PHYSICS LETTERS,2012,100(26)
- [292]王德君.Effects of Vanadium-compensated Concentration onthe Electrical Characteristics of 6H-SiC Photocon...[A],2012,1508-1510
- [293]王德君.Influence of Dry Recess Process on Enhancement-mode GaN MOSFET[A],2012,54-54
- [294]王德君.Characterization of GaN MOSFETs on AlGaN/GaN Heterostructure[A],2012,173-176
- [295]王德君.干法刻蚀对增强型GaN MOSFET的影响[A],2012,176-176
- [296]王德君.GaN MOSFET with Boron Trichloride-Based Dry Recess Process[A],2012,66-66
- [297]Cai, Jian, Zhang, Wenjie, Wang, Shuidi, Qian, Dejun.ATOMIC LAYER DEPOSITION TIN BARRIER LAYERS FOR THROUGH SILICON VIA APPLICATIONS[A],2012,95-+
- [298]张海鹏, 齐瑞生, 王德君, 王勇.4H-SiC TPJBS二极管器件结构和器件仿真[J],电力电子技术,2011,45(9):35-37
- [299]Huang, Lingqin, Zhu, Qiaozhi, Gao, Mingchao, Qin, Fuwen, Wang, Dejun, DJ (reprint author), Dalian Univ Technol, Sch Elect Sci & Technol, Fac Elect Informat & Elect Engn, Dalian 116024, Peoples R China..Cleaning of SiC surfaces by low temperature ECR microwave hydrogen plasma[J],APPLIED SURFACE SCIENCE,2011,257(23):10172-10176
- [300]Zhu, Qiaozhi, Huang, Lingqin, Li, Wenbo, Shenmin, Wang, Dejun, QZ (reprint author), Dalian Univ Technol, Fac Elect Informat & Elect Engn, Sch Elect Sci & Technol, Dalian 116024, Peoples R China..Chemical structure study of SiO2/4H-SiC (0001) interface transition region by angle-dependent x...[J],APPLIED PHYSICS LETTERS,2011,99(8)