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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：清华大学
学位：博士
所在单位：控制科学与工程学院
学科：微电子学与固体电子学. 凝聚态物理. 控制理论与控制工程
电子邮箱：dwang121@dlut.edu.cn
扫描关注
- [301]苏步春, 张海鹏, 王德君.SOI LIGBT抗闩锁效应的研究与进展[J],微电子学,2011,41(3):461-464,478
- [302]Zhang H.P., Qi R.S., Zhao W.L., Zhang H.F., Liu G.H., Wang D.J., Niu X.Y., Lin M., Xu L.Y..Forward block characteristic of a novel anti-ESD RF SOI LIGBT with a buried P-type layer[A],2011,454-457
- [303]王德君.Chemical structure study of SiO(2)/4H-SiC (0001) interface transition region by angle-dependent x...[J],APPLIED PHYSICS LETTERS,2011,99(8):82102-82102
- [304]Zhang H., Qi R., Zhang L., Su B., Wang D., Zhang, H., Key Laboratory of RF Circuit, System, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China, email: islotus@163.com.Vertical gate RF SOI LIGBT for SPICs with significantly improved latch-up immunity[J],VLSI Design,2011,2011
- [305]Zhang, Haipeng, Liang, Wang, Dejun, Liu, Guohua, Lin, Mi, Niu, Xiaoyan, Fan, Lingyan.Negative ESD Robustness of a Novel Anti-ESD TGFPTD SOI LDMOS[A],2010,1227-1230
- [306]Zhang H., Zhang L., Niu X., Li W., Wang J., Wang Y., Wang D..Positive ESD robustness of a novel anti-ESD TGFPTD SOI LDMOS[A],2010,1-5
- [307]Xu S., Zhang H., Fan L., Liu G., Niu X., Lin M., Xu L., Wang D..A novel low on-resistance SOI LDMOS with double trench gates and plates[A],2010
- [308]郑康伟, 黄玲琴, 江滢, 王德君.Pt/4H—SiC肖特基接触的氢等离子体改性研究[A],2010,137-139
- [309]张立平, 江滢, 李文波, 王德君.SiO2/SiC界面悬挂键磷钝化的第一性原理研究[A],2010,121-123
- [310]李林茂, 朱巧智, 刘瑞卿, 王德君.SiC MOS界面氮氢等离子体改性及电学特性研究[A],2010,87-89
- [311]朱巧智, 刘瑞卿, 王德君.SiO2/SiC界面氮钝化机理研究[A],2010,140-142
- [312]黄玲琴, 江滢, 王德君.SiC晶圆的ECR氢等离子体清洗研究[A],2010,83-86
- [313]赵胜, 杨波, 王德君, 王青鹏.一种高速高保真H.264编码器的设计[A],2010,607-613
- [314]胡志海, 王德君, 赵巧云, 朱巧智, Hu, Z.(camfence@yahoo.com.cn).基于SOPC的便携式智能图像采集系统设计[J],仪器仪表学报,2010,31(2):371-376
- [315]Xu S.G., Zhang H.P., Wang D.J., Liu G.H., Niu X.Y., Lin M., Xu L.Y..Forward block characteristic of a novel RF SOI LDMOS with a buried P-type layer[A],2010
- [316]王德君.Atomic Layer Deposition TiN Barrier Layers for Through Silicon Via Applications[A],2010,1-5
- [317]王德君.Properties of Barrier Layer for TSV Applications[A],2010
- [318]王德君.一种快速高保真H.264编码器[A],2010
- [319]王德君.Forward Block characteristic of a novel SOI LDMOS with a Buried P-type layer[A],2010,88-89
- [320]王德君.SiO2/SiC 界面氮钝化机理研究[A],2010,140-142