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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：清华大学
学位：博士
所在单位：控制科学与工程学院
学科：微电子学与固体电子学. 凝聚态物理. 控制理论与控制工程
电子邮箱：dwang121@dlut.edu.cn
扫描关注
- [121]黄昊, 王德君, Li W., 徐瑛, 秦红, 胡谊.A simplified compact model of miniaturized cross-shaped CMOS integrated Hall devices[J],Journal of Semiconductors,2022,33(8)
- [122]王德君.Atomic Layer Deposition TiN Barrier Layers for Through Silicon Via Applications[A],Proceedings of the ASME 2010 International Mechanical Engineering Congress & Exposition (IMECE2010),2022,1-5
- [123]Cai, Jian, Zhang, Wenjie, Wang, Shuidi, 王谦, 王德君.ATOMIC LAYER DEPOSITION TIN BARRIER LAYERS FOR THROUGH SILICON VIA APPLICATIONS[A],ASME International Mechanical Engineering Congress and Exposition (IMECE),2022,95-+
- [124]Huang, Lingqin, 王德君.Barrier inhomogeneities and electronic transport of Pt contacts to relatively highly doped n-ty...[J],JOURNAL OF APPLIED PHYSICS,2022,117(20)
- [125]Huang, Lingqin, Geiod, Rechard, 王德君.Barrier inhomogeneities and interface states of metal/4H-SiC Schottky contacts[J],JAPANESE JOURNAL OF APPLIED PHYSICS,2022,55(12)
- [126]杨超, 王德君.Bias temperature instability in SiC metal-oxide-semiconductor devices[J],JOURNAL OF PHYSICS D APPLIED PHYSICS,2022,54(12):123002-123002
- [127]苏艳, 王德君.Carrier capture and emission properties of silicon interstitial defects in near SiC/SiO2 interfac...[J],APPLIED SURFACE SCIENCE,2022,514:145889-145889
- [128]杨超, 王德君.Capacitance–Voltage Measurements and Bias Temperature Stress Induced Flatband Voltage Instabilit...[A],Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018),2022,2018(July):13-26
- [129]Liu, Bingbing, Huang, Lingqin, Zhu, Qiaozhi, 秦福文, 王德君.Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma[J],APPLIED PHYSICS LETTERS,2022,104(20)
- [130]Liu, Bingbing, Huang, Lingqin, Zhu, Qiaozhi, 秦福文, 王德君.Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma (vol 10...[J],APPLIED PHYSICS LETTERS,2022,104(26)
- [131]王德君.Chemical structure study of SiO(2)/4H-SiC (0001) interface transition region by angle-dependent x...[J],APPLIED PHYSICS LETTERS,2022,99(8):82102-82102
- [132]王德君.Characterization of GaN MOSFETs on AlGaN/GaN Heterostructure[A],59th JSAP spring meeting,2022,173-176
- [133]Wang, Qingpeng, Jiang, Ying, Li, Liuan, 王德君, Ohno, Yasuo, Ao, Jin-Ping.Characterization of GaN MOSFETs on AlGaN/GaN Heterostructure With Variation in Channel Dimensio...[J],IEEE TRANSACTIONS ON ELECTRON DEVICES,2022,61(2,SI):498-504
- [134]黄海云, 王德君, 徐跃.CMOS集成2D垂直型霍尔传感器电路设计[J],电子测量与仪器学报,2022,9:1295-1301
- [135]Huang, Lingqin, Zhu, Qiaozhi, Gao, Mingchao, 秦福文, 王德君.Cleaning of SiC surfaces by low temperature ECR microwave hydrogen plasma[J],APPLIED SURFACE SCIENCE,2022,257(23):10172-10176
- [136]Wei, Tiwei, Cai, Jian, 王谦, Liu, Ziyu, Li, Yinan, 王涛, 王德君.Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (TSV)[A],13th International Conference on Electronic Packaging Technology and High Density Packaging (ICEPT-HDP),2022,482-486
- [137]赵亮, 王德君, 马继开, 陈素华, 王海波.用XPS法研究SiO2/4H-SiC界面的组成[J],半导体技术,2022,2:121-125
- [138]汤斌, 李文波, 刘冰冰, 刘道森, 秦福文, 王德君.电子回旋共振氮等离子体氧化后退火对4H-SiC MOS电容TDDB特性的影响[J],固体电子学研究与进展,2022,35(2):191
- [139]秦福文, 王德君.碳化硅MOS器件氧化层界面附近碳存在形式的理论研究进展[J],智能电网,2022,6(1):12-17
- [140]李轶楠, 蔡坚, 王德君, 王谦, 魏体伟.硅通孔电镀铜填充工艺优化研究[J],电子工业专用设备,2022,41(10):6-10