|
个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：清华大学
学位：博士
所在单位：控制科学与工程学院
学科：微电子学与固体电子学. 凝聚态物理. 控制理论与控制工程
电子邮箱：dwang121@dlut.edu.cn
扫描关注
- [141]王德君, 何淼, 秦芝, 黄庆, 都时禹.碳化铀核燃料缺陷结构的研究现状[J],核技术,2022,7:83-94
- [142]王德君.超高压4H-SiC光导开关的设计与研究[A],中国电工技术学会电力电子学会第十三届学术年会,2022
- [143]Zhang, Haipeng, 张亮, 王德君, 刘国华, Lin, Mi, Niu, Xiaoyan, Fan, Lingyan.Negative ESD Robustness of a Novel Anti-ESD TGFPTD SOI LDMOS[A],IEEE Asia Pacific Conference on Circuit and System (APCCAS),2022,1227-1230
- [144]王德君, 高明超, 朱巧智, 秦福文, 宋世巍, 王晓霞.N型4H-SiC ECR氢等离子体处理研究[J],固体电子学研究与进展,2022,29(3):334-338,416
- [145]马继开, 王德君, 朱巧智, 赵亮, 王海波.n型4H-SiC湿氧二次氧化退火工艺与SiO2/SiC界面研究[J],International Journal of Minerals Metallurgy and Materials,2022,11:1282-1285
- [146]Li, Wenbo, 赵纪军, Zhu, Qiaozhi, 王德君.Oxidation of step edges on vicinal 4H-SiC(0001) surfaces[J],APPLIED PHYSICS LETTERS,2022,103(21)
- [147]王德君.Oxide thickness dependency on threshold voltage of GaN MOSFETs on AlGaN/GaN heterostructure[A],the 60th JSAP Spring Meeting,2022
- [148]Cai, Chengxuan, Wei, Shengsheng, Yin, Zhipeng, Bai, Jiao, Xie, Weiwei, 李岳, 秦福文, 闫肃, 王德君.Oxygen vacancy formation and uniformity of conductive filaments in Si-doped Ta2O5 RRAM[J],APPLIED SURFACE SCIENCE,2022,560
- [149]Li, Wenbo, 王德君, Pan, Yan, Yang, Fei, Ling, Wang, Fangfang, 刘征, Xia, Jinghua, 秦福文, Xiaolin, Yongping, Liu, Rui.Passivation effects of phosphorus on 4H-SiC (0001) Si dangling bonds: A first-principles study[J],Chinese Physics B,2022,26(3)
- [150]Zhang, Yi-Jie, Yin, Zhi-Peng, 苏艳, 王德君.Passivation of carbon dimer defects in amorphous SiO2/4H-SiC(0001) interface: A first-principle...[J],Chinese Physics B,2022,27(4)
- [151]Liu, Bingbing, 秦福文, 王德君.Passivation of SiO2/4H-SiC interface defects via electron cyclotron resonance hydrogen-nitrogen...[J],APPLIED SURFACE SCIENCE,2022,364:769-774
- [152]王德君.Passivation Technology and Electronic Properties of SiC MOS Interface Traps[A],International Forum on Wide Bandgap Semiconductors China (IFWS 2017),2022,68-68
- [153]张华, 张丽, 王德君, Niu X., 李汶, 王健, 王怡.Positive ESD robustness of a novel anti-ESD TGFPTD SOI LDMOS[A],2010 International Conference on Computer Applications and Industrial Electronics, ICCAIE 2010,2022,1-5
- [154]Wang, Junqiang, 王谦, Wu, Zijian, Tan, Lin, Cai, Jian, 王德君.Plasma combined self-assembled monolayer pretreatment on electroplated-Cu surface for low tempe...[J],APPLIED SURFACE SCIENCE,2022,403:525-530
- [155]Sun, Yunong, 杨超, Yin, Zhipeng, 秦福文, 王德君.Plasma passivation of near-interface oxide traps and voltage stability in SiC MOS capacitors[J],JOURNAL OF APPLIED PHYSICS,2022,125(18)
- [156]Wang, Qingpeng, Jiang, Ying, Miyashita, Takahiro, Motoyama, Shin-ichi, Li, Liuan, 王德君, Ohno, Yasuo, Ao, Jin-Ping.Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure[J],SOLID STATE ELECTRONICS,2022,99:59-64
- [157]王德君.Process dependency on threshold voltage of GaN MOSFETs on AlGaN/GaN heterostructure[A],10th Topical Workshop on Heterostructure Microelectronics,2022
- [158]王德君.Process dependency on threshold voltage of GaN MOSFETs on AlGaN/GaN Heterostructure[J],SOLID STATE ELECTRONICS,2022,99(9):59-64
- [159]王德君.Properties of Barrier Layer for TSV Applications[A],The ASME 2010 International Mechanical Engineering Congress & Exposition,2022
- [160]Zhang, Wenjie, Cai, Jian, 王德君, 王谦, Wang, Shuidi.Properties of TiN Films Deposited by Atomic Layer Deposition for Through Silicon Via Applicatio...[A],11th International Conference on Electronic Packaging Technology and High Density Packaging (ICEPT-HDP),2022,7-11