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Electronic dynamic behavior in inductively coupled plasmas with radio-frequency bias

Release Time:2019-03-11  Hits:

Indexed by: Journal Article

Date of Publication: 2014-11-01

Journal: CHINESE PHYSICS B

Included Journals: Scopus、ISTIC、EI、SCIE

Volume: 23

Issue: 11

ISSN: 1674-1056

Key Words: inductively coupled plasmas; radio-frequency bias; Langmuir probe; fluid model

Abstract: The inflexion point of electron density and effective electron temperature curves versus radio-frequency (RF) bias voltage is observed in the H mode of inductively coupled plasmas (ICPs). The electron energy probability function (EEPF) evolves first from a Maxwellian to a Druyvesteyn-like distribution, and then to a Maxwellian distribution again as the RF bias voltage increases. This can be explained by the interaction of two distinct bias-induced mechanisms, that is: bias-induced electron heating and bias-induced ion acceleration loss and the decrease of the effective discharge volume due to the sheath expansion. Furthermore, the trend of electron density is verified by a fluid model combined with a sheath module.

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