Current position: Home >> Scientific Research >> Patents

一种减少基片材料受高能离子轰击损伤的方法

Release Time:2019-10-15  Hits:

First Author: 刘巍

Disigner of the Invention: 王友年,Fei Gao

Application Number: CN201510414721.1

Authorization Date: 2015-07-15

Authorization Number: CN105070627A

Prev One:一种体产生负氢离子机制的等离子体腔室

Next One:提高等离子体径向均匀性的等离子体腔室
Recommended Ph.D.Supervisor Recommended MA Supervisor Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click:Times MOBILE Version
The Founding Time : ..
The Last Update Time : ..

Mobile phone sweep