Passivation of SiO2/4H-SiC interface defects via electron cyclotron resonance hydrogen-nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing
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发表时间：2022-10-07
发表刊物：APPLIED SURFACE SCIENCE
卷号：364
页面范围：769-774
ISSN号：0169-4332
