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发表时间：2022-10-07
发表刊物：Chinese Physics B
卷号：26
期号：3
ISSN号：1674-1056
上一条：Oxygen vacancy formation and uniformity of conductive filaments in Si-doped Ta2O5 RRAM
下一条：Passivation of SiO2/4H-SiC interface defects via electron cyclotron resonance hydrogen-nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing
