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Associate Professor Supervisor of Master's Candidates

Paper Publications

[11]zhangdong, baiyizhen, Qin Fuwen, Jia, Fuchao, Wang, Jian, Jiming Bian.Deposition and properties of highly C-oriented GaN films on diamond substrates[J],APPLIED PHYSICS A MATERIALS SCIENCE PROCESSING,2022,102(2):353-358
[12]王三胜, gubiao, xuyin, Qin Fuwen, 隋郁, yangdazhi.用N_2-H_2等离子体氮化GaAs衬底对ECR-PEMOCVD生长立方GaN的影响(英文)[J],发光学报,2022,S1:24-28
[13]汤斌, 李文波, 刘冰冰, 刘道森, Qin Fuwen, Dejun WANG.电子回旋共振氮等离子体氧化后退火对4H-SiC MOS电容TDDB特性的影响[J],固体电子学研究与进展,2022,35(2):191
[14]张志坤, 章俞之, Jiming Bian, 孙景昌, Qin Fuwen, liuweifeng, Luo Yingmin.石墨衬底上低维ZnO纳米材料的生长(英文)[J],无机材料学报,2022,29(01):103-107
[15]Qin Fuwen, Dejun WANG.碳化硅MOS器件氧化层界面附近碳存在形式的理论研究进展[J],智能电网,2022,6(1):12-17
[16]章家岩, 郎佳红, Qin Fuwen, gubiao.等离子体清洗GaAs和Al2O3衬底的RHEED图像分析[J],华中科技大学学报自然科学版,2022,5:88-91
[17]gubiao, xuyin, Qin Fuwen, 王三胜, 隋郁.立方GaN结晶薄膜生长中的ECR等离子体[A],2000年中国材料研讨会,2022,4
[18]李慧, John Wu, 张文兰, Wenqi Lu, Qin Fuwen, dongchuang.线形同轴耦合微波等离子体诊断及硅薄膜制备[J],哈尔滨工程大学学报,2022,3:423-426
[19]zhangdong, baiyizhen, Qin Fuwen, 贾福超, Jijun Zhao, 姜辛.自持金刚石厚膜上GaN薄膜的沉积及其表征[A],TFC’09全国薄膜技术学术研讨会,2022,1
[20]刘明, 刘志文, 谷建峰, Qin Fuwen, machunyu, Zhang Qingyu.蓝宝石基片的处理方法对ZnO薄膜生长行为的影响[J],物理学报,2022,57(2):1133-1140

total172 2/18

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