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马春雨
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Associate Professor Supervisor of Master's Candidates
Paper Publications
[51]张欢欢, 马春雨.热氧化法制备ZnO薄膜的结构及光学特性[A],2009,1
[52]Zhang, H. H., Ma, C. Y., Q. Y., CY (reprint author), Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Dept Phys, Dalian 116022, Peoples R China..Scaling behavior and structure transition of ZrO2 films deposited by RF magnetron sputtering[J],VACUUM,2009,83(11):1311-1316
[53]马春雨, 张庆瑜.反应溅射法制备铝钛掺杂氧化锆薄膜及其热稳定性[J],材料科学与工程学报,2009,26(12):64-66
[54]唐鑫, 吕海峰, 马春雨, 赵纪军, 张庆瑜, Zhang, QY (reprint author), Dalian Univ Technol, State Key Lab Mat Modificat Laser Ion & Electron, Dalian 116024, Peoples R China..Be掺杂纤锌矿ZnO电子结构的第一性原理研究[J],物理学报,2008,57(12):7806-7813
[55]刘明, 魏玮, 曲盛薇, 谷建峰, 马春雨, 张庆瑜, Liu, M (reprint author), Dalian Univ Technol, State Key Lab Mat Modificat Laser Ion & Electron, Dalian 116024, Peoples R China..氧分压对磁控溅射ZnO薄膜生长行为和光学特性的影响[J],无机材料学报,2008,23(6):1096-1100
[56]Ma, C. Y., Briois, P., Bohlmark, J., Lapostolle, F., Billard, A., P (reprint author), UTBM, LERMPS, F-90010 Belfort, France..La9.33Si6O26 electrolyte thin films for IT-SOFC application deposited by a HIPIMS/DC hybrid mag...[J],IONICS,2008,14(6):471-476
[57]马春雨, 李智, 张庆瑜.反应溅射法制备铝钛掺杂氧化锆薄膜及其热稳定的研究[A],2008,152-159
[58]Liu, Z. W., Fu, W. J., M., Gu, J. F., Ma, C. Y., Zhang, Q. Y., QY (reprint author), Dalian Univ Technol, State Key Lab Mat Modificat Laser Ion & Elect Bea, Dalian 116024, Peoples R China..Scaling behavior and coarsening transition of annealed ZnO films on Si substrate[J],6th Asian-European International Conference on Plasma Surface Engineering,2008,202(22-23):5410-5415
[59]Tang, X., Lu, H. F., Ma, C. Y., Zhao, J. J., Zhang, Q. Y., QY (reprint author), Dalian Univ Technol, State Key Lab Mat Modificat Laser Ion & Elect Bea, Dalian 116024, Peoples R China..Ab initio investigations on the electronic structure and optical properties of HX-ZnO[J],PHYSICS LETTERS A,2008,372(32):5372-5376
[60]Ma, C. Y., Zhang, Q. Y., CY (reprint author), Dalian Univ Technol, State Key Lab Mat Modificat Laser Ion & Electron, Dalian 116024, Peoples R China..Interfacial layer growth of ZrO2 films on silicon[J],VACUUM,2008,82(8):847-851
total87 6/9
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