|
个人信息Personal Information
高级工程师
硕士生导师
任职 : 微电子实验教学中心主任
性别：男
毕业院校：大连理工大学
学位：博士
所在单位：集成电路学院
学科：微电子学与固体电子学. 光学工程
办公地点：辽宁省大连市大连经济技术开发区图强街321号大连理工大学开发区校区教学楼C区503室
联系方式：0411-62273210
电子邮箱：shjiank@dlut.edu.cn
扫描关注
- [161]Song, Shiwei, Liang, Hongwei, Liu, Yang, Xia, Xiaochuan, Zhang, Kexiong, Yang, Dechao, Wang, Dongsheng, Du, Guotong, Shen, Rensheng, RS (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Improved quality of GaN epilayer grown on porous SiC substrate by in situ H-2 pre-treatment[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2013,24(9):3299-3302
- [162]Zhang, Kexiong, Song, Shiwei, Yang, Dechao, Shen, Rensheng, Liu, Yang, Xia, Xiaochuan, Luo, Yingmin, Du, Guotong, Liang, Hongwei, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Stress State of GaN Epilayer Grown on Sapphire and 6H-SiC Substrates[J],JOURNAL OF TESTING AND EVALUATION,2013,41(5):798-803
- [163]宋世巍, 梁红伟, 申人升, 柳阳, 张克雄, 夏晓川, 杜国同, Liang, H.-W.(hwliang@dlut.edu.cn).SiN插入层对GaN外延膜应力和光学质量的影响[J],发光学报,2013,34(8):1017-1021
- [164]Song, Shiwei, Liu, Yang, Liang, Hongwei, Yang, Dechao, Zhang, Kexiong, Xia, Xiaochuan, Shen, Rensheng, Du, Guotong, SW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ ...[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2013,24(8):2923-2927
- [165]Yang, Dechao, Liang, Hongwei, Qiu, Yu, Song, Shiwei, Liu, Yang, Shen, Rensheng, Luo, Yingmin, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Improvement of the quality of GaN epilayer by combining a SiNx interlayer and changed GaN growt...[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2013,24(8):2716-2720
- [166]Cheng, Yi, Du, Guotong, Liang, Hongwei, Shen, Rensheng, Xia, Xiaochuan, Wang, Bo, Liu, Yuanda, Song, Shiwei, Yang, Zhang, Zhenzhong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2013,24(8):2750-2754
- [167]Cai, Xin, Liang, Hongwei, Liu, Yuanda, Shen, Rensheng, Xia, Xiaochuan, Yang, Ling, C. C., Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Study of the thermal stability of the H-related donors in high resistivity ZnO:Cu thin films by...[J],CHEMICAL PHYSICS LETTERS,2013,579:90-93
- [168]柯昀洁, 梁红伟, 申人升, 宋世巍, 夏晓川, 柳阳, 张克雄, 杜国同, Liang, H.-W.(hwliang@dlut.edu.cn).喷淋头高度对InGaN/GaN量子阱生长的影响[J],发光学报,2013,34(4):469-473
- [169]杨德超, 梁红伟, 邱宇, 俞振南, 杜国同, 宋世巍, 申人升, 柳阳, 夏晓川, Liang, H.-W.(hwliang@dlut.edu.cn).衬底弯曲度对GaN基LED芯片性能的影响[J],发光学报,2013,34(3):340-344
- [170]Zhang, Hezhi, Shen, Rensheng, Liang, Hongwei, Liu, Yuanda, Yang, Xia, Xiaochuan, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..n-ZnO/p-GaN heterojunction light-emitting diodes with a polarization-induced graded-p-AlxGa1-xN...[J],JOURNAL OF PHYSICS D-APPLIED PHYSICS,2013,46(6)
- [171]Li Xiang-Ping, Chen Bao-Jiu, Shen Ren-Sheng, Zhang Jin-Su, Sun Jia-Shi, Cheng Li-Hong, Zhong Hai-Yang, Tian Yue, Fu Shao-Bo, Du Guo-Tong, Chen, BJ (reprint author), Dalian Maritime Univ, Dept Phys, Dalian 116026, Peoples R China..On the fluorescence enhancement mechanism of Er3+ in germanate glass containing silver particle...[J],CHINESE PHYSICS B,2013,22(2)
- [172]梁红伟, 申人升, 柳阳, 夏晓川.Fabrication of High-performance 400 nm Violet Light Emitting Diode[J],CHINESE JOURNAL OF LUMINESCENCE（发光学报）,2013,34(2):225-229
- [173]申人升, 杜国同.Study on the SRI Sensing Characteristics of PFBG and TFBG[J],Intelligence Computation and Evolutionary Computation,2013,180(2):255-259
- [174]刘艳红, 申人升, 梁红伟.专业课课堂实践教学的探索[J],教育教学论坛,2012,36:222-223
- [175]Liu, Yuanda, Liang, Hongwei, Xia, Xiaochuan, Shen, Rensheng, Yang, Bian, Jiming, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Introducing Ga2O3 thin films as novel electron blocking layer to ZnO/p-GaN heterojunction LED[J],APPLIED PHYSICS B-LASERS AND OPTICS,2012,109(4):605-609
- [176]Liu, Yuanda, Liang, Hongwei, Xia, Xiaochuan, Bian, Jiming, Shen, Rensheng, Yang, Luo, Yingmin, Du, Guotong, YD (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Rediscovery of the Role of the i-Layer in n-ZnO/SiO2/p-GaN Through Observations from Both the Z...[J],JOURNAL OF ELECTRONIC MATERIALS,2012,41(12):3453-3456
- [177]Jiang, Yunfeng, Chen, Baojiu, Shen, Rensheng, Li, Xiangping, Zhang, Jinsu, Zhong, Hua, Tian, Yue, Sun, Jiashi, Cheng, Lihong, Haiyang, XP (reprint author), Dalian Maritime Univ, Dept Phys, Dalian 116026, Liaoning, Peoples R China..Concentration effects on the upconversion luminescence in Ho3+/Yb3+ co-doped NaGdTiO4 phosphor[J],CERAMICS INTERNATIONAL,2012,38(6):5045-5051
- [178]Shen RenSheng, Li XiangPing, Xia XiaoChuan, Liang HongWei, Wu GuoGuang, Liu Yang, Cheng ChuanHui, Du GuoTong, Shen, RS (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Comparative investigation of three types of ethanol sensor based on NiO-SnO2 composite nanofibe...[J],CHINESE SCIENCE BULLETIN,2012,57(17):2087-2093
- [179]Liu, Yuanda, Xia, Xiaochuan, Liang, Hongwei, Zhang, Hezhi, Bian, Jiming, Yang, Shen, Rensheng, Luo, Yingmin, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect, Dalian 116024, Peoples R China..Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal a...[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2012,23(2):542-545
- [180]Xia, Xiaochuan, Zhang, Baolin, Du, Guotong, Shen, Rensheng, Liu, Yuanda, Yang, Dechao, Song, Shiwei, Zhao, Long, Shi, Zhifeng, Li, Xiangping, Liang, Hongwei, XC (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Dominant UV emission from p-MgZnO/n-GaN light emitting diodes[J],OPTICAL MATERIALS EXPRESS,2012,2(1):38-44