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[21]Tao, Pengcheng, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, Liu, Yang, Jiang, Jianhua, Huang, Huishi, Feng, Qiuju, Shen, Rensheng, Luo, Yingmin, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, 2 Linggong Rd, High Tech Pk, Dalian 116024, Peoples R China..Enhanced output power of near-ultraviolet LEDs with AlGaN/GaN distributed Bragg reflectors on 6...[J],SUPERLATTICES AND MICROSTRUCTURES,2015,85:482-487
[22]Liang, Hongwei, Chen, Yuanpeng, Luo, Yingmin, Du, Guotong, Xia, Xiaochuan, Feng, Qiuju, Liu, Yang, Shen, Rensheng, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Influence of Sb valency on the conductivity type of Sb-doped ZnO[J],THIN SOLID FILMS,2015,589:199-202
[23]Chen, Yuanpeng, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, Tao, Pengcheng, Shen, Rensheng, Liu, Yang, Feng, Yanbin, Zheng, Yuehong, Li, Xiaona, XC (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..The lattice distortion of beta-Ga2O3 film grown on c-plane sapphire[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2015,26(5):3231-3235
[24]Cai, Xin, Liang, Hongwei, Xia, Xiaochuan, Shen, Rensheng, Luo, Yingmin, Du, Guotong, Liu, Yang, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Influence of Cu dopant on the structure and optical properties of ZnO thin films prepared by MO...[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2015,26(3):1591-1596
[25]Chen, Yuanpeng, Liang, Hongwei, Xia, Xiaochuan, Shen, Rensheng, Liu, Yang, Luo, Yingmin, Du, Guotong, XC (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Effect of growth pressure on the characteristics of beta-Ga2O3 films grown on GaAs (100) substr...[J],APPLIED SURFACE SCIENCE,2015,325(C):258-261
[26]Zhang, Kexiong, Shen, Rensheng, Wang, Dongsheng, Liang, Hongwei, Du, Guotong, Luo, Yingmin, Xia, Xiaochuan, Liu, Yang, Deng, Qunxiong, Guo, Wenping, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..The properties of reversed polarization yellow InGaN-GaN MQWs in p-side down structure grown by...[J],PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2014,64:57-62
[27]Tao, Pengcheng, Deng, Qunxiong, Du, Guotong, Liang, Hongwei, Wang, Dongsheng, Xia, Xiaochuan, Feng, Qiuju, Liu, Yang, Shen, Rensheng, Zhang, Kexiong, Luo, Yingmin, Guo, Wenping, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Crack-free AlGaN/GaN distributed Bragg reflectors synthesized by insertion of a thin SiNx inter...[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2014,27:841-845
[28]Tao, Pengcheng, Luo, Yingmin, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, Feng, Qiuju, Wang, Dongsheng, Liu, Yang, Shen, Rensheng, Zhang, Kexiong, Cai, Xin, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal ...[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2014,25(10):4268-4272
[29]Zhang, Kexiong, Liang, Hongwei, Liu, Yang, Shen, Rensheng, Guo, Wenping, Wang, Dongsheng, Xia, Xiaochuan, Tao, Pengcheng, Yang, Chao, Luo, Yingmin, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunnelin...[J],SCIENTIFIC REPORTS,2014,4:6322
[30]Zhang, Kexiong, Du, Guotong, Liang, Hongwei, Shen, Rensheng, Song, Shiwei, Wang, Dongsheng, Liu, Yang, Xia, Xiaochuan, Yang, Dechao, Luo, Yingmin, KX (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth[J],APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2014,116(4):1561-1566

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