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[11]Liu, Jianxun, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, Abbas, Qasim, Yang, Luo, Yingmin, Zhang, Yuantao, Yan, Long, Han, Xu, HW (reprint author), Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China..Anomalous indium incorporation and optical properties of high indium content InGaN grown by MOC...[J],JOURNAL OF ALLOYS AND COMPOUNDS,2018,735:1239-1244
[12]Chen, Yuanpeng, Xia, Xiaochuan, Liang, Hongwei, Abbas, Qasim, Du, Guotong, Liu, Yang, HW (reprint author), Dalian Univ Technol, Sch Phys, Dalian 116024, Peoples R China..Growth Pressure Controlled Nucleation Epitaxy of Pure Phase epsilon- and beta-Ga2O3 Films on Al...[J],CRYSTAL GROWTH & DESIGN,2018,18(2):1147-1154
[13]Liu, Jianxun, Du, Guotong, Liang, Hongwei, Zheng, Xiantong, Yang, Xia, Xiaochuan, Abbas, Qasim, Huang, Huolin, Shen, Rensheng, Luo, Yingmin, HW (reprint author), Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China..Degradation Mechanism of Crystalline Quality and Luminescence in In0.42Ga0.58N/GaN Double Heter...[J],JOURNAL OF PHYSICAL CHEMISTRY C,2017,121(33):18095-18101
[14]Liu, Jianxun, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, Yang, Jun, Abbas, Qasim, Shen, Rensheng, Luo, Yingmin, Zhang, Yuantao, HW (reprint author), Dalian Univ Technol, Sch Microelect, Sch Phys, Dalian 116024, Peoples R China..Indium Incorporation Induced Morphological Evolution and Strain Relaxation of High Indium Conte...[J],CRYSTAL GROWTH & DESIGN,2017,17(6):3411-3418
[15]Liu, Jianxun, Liang, Hongwei, Yang, Xia, Xiaochuan, Huang, Huolin, Tao, Pengcheng, Sandhu, Qasim Abbas, Shen, Rensheng, Luo, Yingmin, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Strain and microstructures of GaN epilayers with thick InGaN interlayer grown by MOCVD[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2017,60:66-70
[16]Xia, Xiaochuan, Yang, Chao, Liu, Yang, Shen, Rensheng, Xu, Mengxiang, Du, Guotong, Liang, Hongwei, Geng, Xinlei, Chen, Yuanpeng, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Synthesis of GaN network by nitridation of hexagonal epsilon-Ga2O3 film[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2017,28(3):2598-2601
[17]Liang, Hongwei, Du, Guotong, Tao, Pengcheng, Xia, Xiaochuan, Chen, Yuanpeng, Zhang, Kexiong, Liu, Yang, Shen, Rensheng, Luo, Yingmin, Yuantao, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Vertically conducting deep-ultraviolet light-emitting diodes with interband tunneling junction ...[J],JAPANESE JOURNAL OF APPLIED PHYSICS,2016,55(3)
[18]Tao, Pengcheng, Luo, Yingmin, Zhang, Yuantao, Liu, Jianxun, Zhu, Zhifu, Yang, Shen, Rensheng, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, Chen, Yuanpeng, Yang, Chao, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Crack-free Al0.5Ga0.5N epilayer grown on SiC substrate by in situ SiNx interlayer[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2016,41:291-296
[19]Liu, Jianxun, Du, Guotong, Liang, Hongwei, Li, Binghui, Yang, Xia, Xiaochuan, Huang, Huolin, Sandhu, Qasim Abbas, Shen, Rensheng, Luo, Yingmin, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Unintentionally doped high resistivity GaN layers with an InGaN interlayer grown by MOCVD[J],RSC ADVANCES,2016,6(65):60068-60073
[20]Liang, Hongwei, Shen, Rensheng, Liu, Yang, Luo, Yingmin, Du, Guotong, Chen, Yuanpeng, Xia, Xiaochuan, Zhang, Chao, XC (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium...[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2015,39:582-586

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