Effect of process parameters on oxidation-enhanced removal mechanisms of GaN in photoelectrochemical mechanical polishing
Release Time:2026-03-29 Hits:
Indexed by: Journal Papers
Document Code: 565588
Date of Publication: 2025-09-15
Journal: INTERNATIONAL JOURNAL OF MECHANICAL SCIENCES
Volume: 302
ISSN: 0020-7403
Key Words: CMP; DAMAGE; GALLIUM NITRIDE; GROWTH; PHASE; PLANARIZATION; SLURRY; SURFACTANT; TRANSITION; WURTZITE