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的个人主页 http://faculty.dlut.edu.cn/kid/zh_CN/index.htm
教授博士生导师硕士生导师
主要任职：集成电路学院院长

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[46]Liang, Hongwei, Xia, Xiaochuan, Shen, Rensheng, Liu, Yang, Luo, Yingmin, Du, Guotong, Zhang, Chao, Chen, Yuanpeng, XC (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium...[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2015,39:582-586
[47]Sun, Jingchang, Zhao, Ting, Ma, Zhangwei, Li, Ming, Chang, Cheng, Chengren, Liang, Hongwei, Bian, Jiming, JC (reprint author), Liaoning Normal Univ, Sch Phys & Elect Technol, Dalian 116029, Peoples R China..Controllable end shape modification of ZnO nano-arrays/rods by a simple wet chemical etching te...[J],JOURNAL OF PHYSICS D-APPLIED PHYSICS,2015,48(36)
[48]Tao, Pengcheng, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, Liu, Yang, Jiang, Jianhua, Huang, Huishi, Feng, Qiuju, Shen, Rensheng, Luo, Yingmin, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, 2 Linggong Rd, High Tech Pk, Dalian 116024, Peoples R China..Enhanced output power of near-ultraviolet LEDs with AlGaN/GaN distributed Bragg reflectors on 6...[J],SUPERLATTICES AND MICROSTRUCTURES,2015,85:482-487
[49]Liang, Hongwei, Chen, Yuanpeng, Xia, Xiaochuan, Feng, Qiuju, Liu, Yang, Shen, Rensheng, Luo, Yingmin, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Influence of Sb valency on the conductivity type of Sb-doped ZnO[J],THIN SOLID FILMS,2015,589:199-202
[50]Liang H., Ma K..Research of navigation safety based on parametric roll[J],Ship Building of China,2015,56:185-192
[51]Feng, Qiu-Ju, Liu, Jia-Yuan, Ling, C. C., Tao, Peng-Cheng, Pan, De-Zhu, Yang, Yu-Qi, Liang, Hong-Wei, Mei, Yi-Ying, QJ (reprint author), Liaoning Normal Univ, Sch Phys & Elect Technol, Dalian 116029, Peoples R China..ZnO single microwire homojunction light emitting diode grown by electric field assisted chemica...[J],JOURNAL OF MATERIALS CHEMISTRY C,2015,3(18):4678-4682
[52]Chen, Yuanpeng, Liu, Yang, Feng, Yanbin, Zheng, Yuehong, Li, Xiaona, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, Tao, Pengcheng, Shen, Rensheng, XC (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..The lattice distortion of beta-Ga2O3 film grown on c-plane sapphire[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2015,26(5):3231-3235
[53]Cai, Xin, Luo, Yingmin, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, Shen, Rensheng, Liu, Yang, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Influence of Cu dopant on the structure and optical properties of ZnO thin films prepared by MO...[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2015,26(3):1591-1596
[54]Liu, Tong, Jiao, Shujie, Wang, Dongbo, Gao, Shiyong, Yang, Tianpeng, Liang, Hongwei, Zhao, Liancheng, SJ (reprint author), Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China..Radiative recombination mechanism of carriers in InGaN/AlInGaN multiple quantum wells with vary...[J],JOURNAL OF ALLOYS AND COMPOUNDS,2015,621:12-17
[55]Chen, Yuanpeng, Liang, Hongwei, Xia, Xiaochuan, Shen, Rensheng, Liu, Yang, Luo, Yingmin, Du, Guotong, XC (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Effect of growth pressure on the characteristics of beta-Ga2O3 films grown on GaAs (100) substr...[J],APPLIED SURFACE SCIENCE,2015,325(C):258-261
[56]Liu, Tong, Jiao, Shujie, Liang, Hongwei, Yang, Tianpeng, Wang, Dongbo, Zhao, Liancheng, SJ (reprint author), Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China..Enhanced carrier localization in near-ultraviolet multiple quantum wells using quaternary AlInG...[J],RSC ADVANCES,2015,5(43):33892-33896
[57]Zhang, Kexiong, Liang, Hongwei, Du, Guotong, Luo, Yingmin, Xia, Xiaochuan, Liu, Yang, Deng, Qunxiong, Guo, Wenping, Shen, Rensheng, Wang, Dongsheng, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..The properties of reversed polarization yellow InGaN-GaN MQWs in p-side down structure grown by...[J],PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2014,64:57-62
[58]Tao, Pengcheng, Guo, Wenping, Deng, Qunxiong, Du, Guotong, Liang, Hongwei, Wang, Dongsheng, Xia, Xiaochuan, Feng, Qiuju, Liu, Yang, Shen, Rensheng, Zhang, Kexiong, Luo, Yingmin, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Crack-free AlGaN/GaN distributed Bragg reflectors synthesized by insertion of a thin SiNx inter...[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2014,27:841-845
[59]Tao, Pengcheng, Luo, Yingmin, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, Feng, Qiuju, Wang, Dongsheng, Liu, Yang, Shen, Rensheng, Zhang, Kexiong, Cai, Xin, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal ...[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2014,25(10):4268-4272
[60]Zhang, Kexiong, Luo, Yingmin, Du, Guotong, Liang, Hongwei, Liu, Yang, Shen, Rensheng, Guo, Wenping, Wang, Dongsheng, Xia, Xiaochuan, Tao, Pengcheng, Yang, Chao, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunnelin...[J],SCIENTIFIC REPORTS,2014,4:6322

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