大连理工大学主页平台管理系统梁红伟--中文主页--论文成果

扫描手机二维码

欢迎您的访问
您是第位访客

开通时间：..

最后更新时间：..

大连理工大学| 登录| English | 手机版

同专业博导

同专业硕导

个人学术主页

梁红伟 ( 教授 ) 赞
的个人主页 http://faculty.dlut.edu.cn/kid/zh_CN/index.htm
教授博士生导师硕士生导师
主要任职：集成电路学院院长

论文成果当前位置: 中文主页 >> 科学研究 >> 论文成果

[61]Zhang, Kexiong, Song, Shiwei, Wang, Dongsheng, Liu, Yang, Xia, Xiaochuan, Yang, Dechao, Luo, Yingmin, Du, Guotong, Liang, Hongwei, Shen, Rensheng, KX (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth[J],APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2014,116(4):1561-1566
[62]冯秋菊, 许瑞卓, 郭慧颖, 徐坤, 李荣, 陶鹏程, 梁红伟, 刘佳媛, 梅艺赢, Feng, QJ (reprint author), Liaoning Normal Univ, Sch Phys & Elect Technol, Dalian 116029, Peoples R China..衬底位置对化学气相沉积法制备的磷掺杂p型ZnO纳米材料形貌和特性的影响[J],物理学报,2014,63(16):424-429
[63]Yang Dechao, Zhang Yuantao, Du Guotong, Liang Hongwei, Qiu Yu, Li Pengchong, Liu Yang, Shen Rensheng, Xia Xiaochuan, Yu Zhennan, Chang Yuchun, Zhang, YT (reprint author), Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China..Selective Growth of GaN on Slope Cone-shaped Patterned Sapphire Substrate[J],CHEMICAL RESEARCH IN CHINESE UNIVERSITIES,2014,30(4):556-559
[64]周楠, 郑强, 胡北辰, 石德权, 苗春雨, 马春雨, 梁红伟, 郝胜智, 张庆瑜, Zhang, QY (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China..表面态调控对GaN荧光光谱的影响[J],物理学报,2014,63(13):393-397
[65]Wang, Dongsheng, Liang, Hongwei, Tao, Pengcheng, Zhang, Kexiong, Song, Shiwei, Liu, Yang, Xia, Xiaochuan, Shen, Rensheng, Du, Guotong, HW (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China..Crack-free ultraviolet AlGaN/GaN distributed Bragg reflectors grown by MOVPE on 6H-SiC(0001)[J],SUPERLATTICES AND MICROSTRUCTURES,2014,70:54-60
[66]陶鹏程, 梁红伟, 王东盛, 夏晓川, 柳阳, 申人升, 骆英民, 杜国同.SiC衬底上制备紫外波段高反射AlGaN/GaN分布布拉格反射镜[A],2014,79-79
[67]杜国同, 张宝林, 梁红伟, 张源涛, 夏晓川, 史志锋, 张克雄, 伍斌, 申人升.MOCVD法制备ZnO-GaN组合激光器件[A],2014,57-57
[68]Cheng, Yi, Chen, Jixiang, Yang, Kun, Wang, Yizhuo, Yin, Yan, Liang, Hongwei, Du, Guotong, Y (reprint author), Dalian Maritime Univ, Dept Phys, Dalian 116026, Peoples R China..Structural, morphological, FTIR and photoluminescence properties of gallium oxide thin films[J],JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2014,32(3)
[69]Liang, Hongwei, Feng, Qiuju, Xia, Xiaochuan, Li, Rong, Guo, Huiying, Xu, Kun, Tao, Pengcheng, Chen, Yuanpeng, Du, Guotong, QJ (reprint author), Liaoning Normal Univ, Sch Phys & Elect Technol, Dalian 116029, Peoples R China..Room temperature electroluminescence from arsenic doped p-type ZnO nanowires/n-ZnO thin film ho...[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2014,25(4):1955-1958
[70]Yang, Dechao, Liu, Yang, Xia, Xiaochuan, Song, Shiwei, Zhang, Kexiong, Yu, Zhennan, Yuantao, Du, Guotong, Liang, Hongwei, Qiu, Yu, Shen, Rensheng, YT (reprint author), Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, 2699 Qianjin St, Changchun 130023, Peoples R China..Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by...[J],APPLIED SURFACE SCIENCE,2014,295:26-30
[71]Jiang, M., Xue, X. D., Chen, Z. Q., Liu, Y. D., Liang, H. W., Zhang, H. J., Kawasuso, A., ZQ (reprint author), Wuhan Univ, Dept Phys, Hubei Nucl Solid Phys Key Lab, Wuhan 430072, Peoples R China..Defects and acceptor centers in ZnO introduced by C+-implantation[J],JOURNAL OF MATERIALS SCIENCE,2014,49(5):1994-1999
[72]Zhang, Kexiong, Liang, Hongwei, Shen, Rensheng, Wang, Dongsheng, Tao, Pengcheng, Liu, Yang, Xia, Xiaochuan, Luo, Yingmin, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Negative differential resistance in low Al-composition p-GaN/Mg-doped Al0.15Ga0.85N/n(+)-GaN he...[J],APPLIED PHYSICS LETTERS,2014,104(5)
[73]Wang Dong-Sheng, Shen Ren-Sheng, Liu Yang, Xia Xiao-Chuan, Luo Ying-Min, Du Guo-Tong, Zhang Ke-Xiong, Liang Hong-Wei, Song Shi-Wei, Yang De-Chao, Liang, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Enhanced Output Power of Near-Ultraviolet Light-Emitting Diodes by p-GaN Micro-Rods[J],CHINESE PHYSICS LETTERS,2014,31(2)
[74]梁红伟.衬底位置对化学气相沉积法制备的磷掺杂p型氧化锌纳米材料形貌和特性的影响[J],物理学报,2014,63(16):168101-168103
[75]Yang, Dechao, Du, Guotong, Liang, Hongwei, Qiu, Yu, Shen, Rensheng, Liu, Yang, Xia, Xiaochuan, Song, Shiwei, Zhang, Kexiong, Yu, Zhennan, GT (reprint author), Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130023, Peoples R China..Improving the quality of GaN epilayer by preparing a novel patterned sapphire substrate[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2014,25(1):267-272

共194条 5/13

首页上页下页尾页页

辽ICP备05001357号地址：中国·辽宁省大连市甘井子区凌工路2号邮编：116024
版权所有：大连理工大学