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Qin Fuwen
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Associate Professor Supervisor of Master's Candidates
Paper Publications
[41]苏艳, 秦福文, 王德君.Synergistic passivation effects of nitrogen plasma and oxygen plasma on improving the interface q...[J],Applied Surface Science,2020,513:145837-145837
[42]Yang, Chao, Yin, Zhipeng, Zhang, Fanglong, Su, Yan, Qin, Fuwen, Wang, Dejun, DJ (reprint author), Dalian Univ Technol, Fac Elect Informat & Elect Engn, Sch Control Sci & Engn, Minist Educ, Key Lab Intelligent Control & Optimizat Ind Equip, Dalian 116024, Peoples R China..Synergistic passivation effects of nitrogen plasma and oxygen plasma on improving the interface...[J],APPLIED SURFACE SCIENCE,2020,513
[43]王宁, 马春雨, 胡金娟, 王佳琳, 秦福文, 张庆瑜.MoS2/GO-g-C3N4-ZnO三元复合纳米材料的制备及可见光光催化性能研究[J],功能材料,2019,50(9):6-12
[44]Yang, Chao, Zhang, Fanglong, Yin, Zhipeng, Su, Yan, Qin, Fuwen, Wang, Dejun, DJ (reprint author), Dalian Univ Technol, Fac Elect Informat & Elect Engn, Sch Control Sci & Engn, Liaoning Integrated Circuit Technol Key Lab, Dalian 116024, Peoples R China..Interface properties and bias temperature instability with ternary H-Cl-N mixed plasma post-oxi...[J],APPLIED SURFACE SCIENCE,2019,488:293-302
[45]Sun, Yunong, Wang, Dejun, Yang, Chao, Yin, Zhipeng, Qin, Fuwen, DJ (reprint author), Dalian Univ Technol, Sch Control Sci & Engn, Fac Elect Informat & Elect Engn, Liaoning Integrated Circuit Technol Key Lab, Dalian 116024, Liaoning, Peoples R China..Plasma passivation of near-interface oxide traps and voltage stability in SiC MOS capacitors[J],JOURNAL OF APPLIED PHYSICS,2019,125(18)
[46]王三胜, 顾彪, 徐茵, 秦福文, 隋郁, 杨大智.用N_2-H_2等离子体氮化GaAs衬底对ECR-PEMOCVD生长立方GaN的影响(英文)[J],发光学报,2001,S1:24-28
[47]顾彪, 隋郁, 秦福文, 王三胜, 徐茵.立方GaN结晶薄膜生长中的ECR等离子体[A],2000,4
[48]徐茵, 从吉远, 杨树人, 顾彪, 秦福文.GaN薄膜低温外延的ECR-PAMOCVD技术[J],半导体技术,1998,01:38-40
[49]徐茵, 夏亚红, 秦福文, 顾彪.氮ECR微波等离子体的电子能量分布研究[J],核聚变与等离子体物理,1997,17(3):45
[50]顾彪, 孙捷, 张砚臣, 丛吉远, 秦福文, 徐茵.GaAs衬底上立方GaN的低温生长[J],稀有金属,1998,22(2):143-145
total172 5/18
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