柳阳

个人信息Personal Information

工程师

性别：男

毕业院校：大连理工大学

学位：硕士

所在单位：集成电路学院

电子邮箱：lyang@dlut.edu.cn

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[81]Chen, Yuanpeng, Liang, Hongwei, Xia, Xiaochuan, Shen, Rensheng, Liu, Yang, Luo, Yingmin, Du, Guotong, XC (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Effect of growth pressure on the characteristics of beta-Ga2O3 films grown on GaAs (100) substr...[J],APPLIED SURFACE SCIENCE,2015,325(C):258-261
[82]Zhang, Kexiong, Shen, Rensheng, Wang, Dongsheng, Liang, Hongwei, Du, Guotong, Luo, Yingmin, Xia, Xiaochuan, Liu, Yang, Deng, Qunxiong, Guo, Wenping, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..The properties of reversed polarization yellow InGaN-GaN MQWs in p-side down structure grown by...[J],PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2014,64:57-62
[83]Tao, Pengcheng, Deng, Qunxiong, Du, Guotong, Liang, Hongwei, Wang, Dongsheng, Xia, Xiaochuan, Feng, Qiuju, Liu, Yang, Shen, Rensheng, Zhang, Kexiong, Luo, Yingmin, Guo, Wenping, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Crack-free AlGaN/GaN distributed Bragg reflectors synthesized by insertion of a thin SiNx inter...[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2014,27:841-845
[84]Tao, Pengcheng, Luo, Yingmin, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, Feng, Qiuju, Wang, Dongsheng, Liu, Yang, Shen, Rensheng, Zhang, Kexiong, Cai, Xin, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal ...[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2014,25(10):4268-4272
[85]Zhang, Kexiong, Liang, Hongwei, Liu, Yang, Shen, Rensheng, Guo, Wenping, Wang, Dongsheng, Xia, Xiaochuan, Tao, Pengcheng, Yang, Chao, Luo, Yingmin, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunnelin...[J],SCIENTIFIC REPORTS,2014,4:6322
[86]Zhang, Kexiong, Du, Guotong, Liang, Hongwei, Shen, Rensheng, Song, Shiwei, Wang, Dongsheng, Liu, Yang, Xia, Xiaochuan, Yang, Dechao, Luo, Yingmin, KX (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth[J],APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2014,116(4):1561-1566
[87]Yang Dechao, Chang Yuchun, Yu Zhennan, Xia Xiaochuan, Shen Rensheng, Liu Yang, Li Pengchong, Qiu Yu, Liang Hongwei, Du Guotong, Zhang Yuantao, Zhang, YT (reprint author), Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China..Selective Growth of GaN on Slope Cone-shaped Patterned Sapphire Substrate[J],CHEMICAL RESEARCH IN CHINESE UNIVERSITIES,2014,30(4):556-559
[88]Wang, Dongsheng, Liang, Hongwei, Tao, Pengcheng, Zhang, Kexiong, Song, Shiwei, Liu, Yang, Xia, Xiaochuan, Shen, Rensheng, Du, Guotong, HW (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China..Crack-free ultraviolet AlGaN/GaN distributed Bragg reflectors grown by MOVPE on 6H-SiC(0001)[J],SUPERLATTICES AND MICROSTRUCTURES,2014,70:54-60
[89]Yang, Dechao, Song, Shiwei, Zhang, Kexiong, Yu, Zhennan, Yuantao, Du, Guotong, Liang, Hongwei, Qiu, Yu, Shen, Rensheng, Liu, Yang, Xia, Xiaochuan, YT (reprint author), Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, 2699 Qianjin St, Changchun 130023, Peoples R China..Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by...[J],APPLIED SURFACE SCIENCE,2014,295:26-30
[90]Zhang, Kexiong, Liang, Hongwei, Shen, Rensheng, Wang, Dongsheng, Tao, Pengcheng, Liu, Yang, Xia, Xiaochuan, Luo, Yingmin, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Negative differential resistance in low Al-composition p-GaN/Mg-doped Al0.15Ga0.85N/n(+)-GaN he...[J],APPLIED PHYSICS LETTERS,2014,104(5)
[91]Wang Dong-Sheng, Du Guo-Tong, Zhang Ke-Xiong, Liang Hong-Wei, Song Shi-Wei, Yang De-Chao, Shen Ren-Sheng, Liu Yang, Xia Xiao-Chuan, Luo Ying-Min, Liang, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Enhanced Output Power of Near-Ultraviolet Light-Emitting Diodes by p-GaN Micro-Rods[J],CHINESE PHYSICS LETTERS,2014,31(2)
[92]Yang, Dechao, Du, Guotong, Liang, Hongwei, Qiu, Yu, Shen, Rensheng, Liu, Yang, Xia, Xiaochuan, Song, Shiwei, Zhang, Kexiong, Yu, Zhennan, GT (reprint author), Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130023, Peoples R China..Improving the quality of GaN epilayer by preparing a novel patterned sapphire substrate[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2014,25(1):267-272
[93]Cheng, Yi, Xia, Xiaochuan, Shen, Rensheng, Song, Shiwei, Wu, Yunfeng, Du, Guotong, Liang, Hongwei, Liu, Yang, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Influence of N-2 and O-2 annealing treatment on the optical bandgap of polycrystalline Ga2O3:Cu...[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2013,16(5,SI):1303-1307
[94]Zhang, Kexiong, Liang, Hongwei, Song, Shiwei, Yang, Dechao, Shen, Rensheng, Liu, Yang, Xia, Xiaochuan, Luo, Yingmin, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Stress State of GaN Epilayer Grown on Sapphire and 6H-SiC Substrates[J],JOURNAL OF TESTING AND EVALUATION,2013,41(5):798-803
[95]Song, Shiwei, Shen, Rensheng, Liang, Hongwei, Liu, Yang, Xia, Xiaochuan, Zhang, Kexiong, Yang, Dechao, Wang, Dongsheng, Du, Guotong, RS (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Improved quality of GaN epilayer grown on porous SiC substrate by in situ H-2 pre-treatment[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2013,24(9):3299-3302
[96]宋世巍, 梁红伟, 申人升, 柳阳, 张克雄, 夏晓川, 杜国同, Liang, H.-W.(hwliang@dlut.edu.cn).SiN插入层对GaN外延膜应力和光学质量的影响[J],发光学报,2013,34(8):1017-1021
[97]Yang, Dechao, Liang, Hongwei, Qiu, Yu, Song, Shiwei, Liu, Yang, Shen, Rensheng, Luo, Yingmin, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Improvement of the quality of GaN epilayer by combining a SiNx interlayer and changed GaN growt...[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2013,24(8):2716-2720
[98]Cheng, Yi, Zhang, Zhenzhong, Liu, Yang, Song, Shiwei, Yuanda, Wang, Bo, Xia, Xiaochuan, Shen, Rensheng, Liang, Hongwei, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2013,24(8):2750-2754
[99]Song, Shiwei, Liu, Yang, Liang, Hongwei, Yang, Dechao, Zhang, Kexiong, Xia, Xiaochuan, Shen, Rensheng, Du, Guotong, SW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ ...[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2013,24(8):2923-2927
[100]Cai, Xin, Liang, Hongwei, Liu, Yuanda, Shen, Rensheng, Xia, Xiaochuan, Yang, Ling, C. C., Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Study of the thermal stability of the H-related donors in high resistivity ZnO:Cu thin films by...[J],CHEMICAL PHYSICS LETTERS,2013,579:90-93

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