大连理工大学主页平台管理系统夏晓川--中文主页--论文成果

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夏晓川

学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院

教师拼音名称：xiaxiaochuan
硕士生导师
博士生导师
主要任职：集成电路学院副院长
其他任职：副院长
性别：男
毕业院校：吉林大学
所在单位：集成电路学院
办公地点：大连理工大学开发区校区信息楼211室
联系方式：0411-84707865
电子邮箱：xiaochuan@dlut.edu.cn

论文成果

[16] Chen, Yuanpeng, Liang, Hongwei, Xia, Xiaochuan, Zhang, Heqiu, Shi, Jianjun, Abbas, Qasim, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys, Dalian 116024, Peoples R China., Liang, Sch Microelect.Growth temperature impact on film quality of hBN grown on Al2O3 using non-catalyzed borazane CVD[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2017,28(19):14341-14347
[17] Liu, Jianxun, Du, Guotong, Liang, Hongwei, Zheng, Xiantong, Yang, Xia, Xiaochuan, Abbas, Qasim, Huang, Huolin, Shen, Rensheng, Luo, Yingmin, HW (reprint author), Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China..Degradation Mechanism of Crystalline Quality and Luminescence in In0.42Ga0.58N/GaN Double Heterostructures with Porous InGaN Layer[J],JOURNAL OF PHYSICAL CHEMISTRY C,2017,121(33):18095-18101
[18] Liu, Jianxun, Du, Guotong, Jun, Abbas, Qasim, Shen, Rensheng, Luo, Yingmin, Zhang, Yuantao, Xia, Xiaochuan, Yang, Liang, Hongwei, HW (reprint author), Dalian Univ Technol, Sch Microelect, Sch Phys, Dalian 116024, Peoples R China..Indium Incorporation Induced Morphological Evolution and Strain Relaxation of High Indium Content InGaN Epilayers Grown by Metal-Organic Chemical Vapor Deposition[J],CRYSTAL GROWTH & DESIGN,2017,17(6):3411-3418
[19] Feng, Tian-Hong, Xia, Xiao-Chuan, TH (reprint author), Dongbei Univ Finance & Econ, Sch Math, Dalian, Liaoning, Peoples R China..Characteristics of doping controllable ZnO films grown by photo-assisted metal organic chemical vapor deposition[J],OPTICAL MATERIALS EXPRESS,2017,7(4):1281-1288
[20] Liu, Jianxun, Du, Guotong, Liang, Hongwei, Yang, Xia, Xiaochuan, Huang, Huolin, Tao, Pengcheng, Sandhu, Qasim Abbas, Shen, Rensheng, Luo, Yingmin, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Strain and microstructures of GaN epilayers with thick InGaN interlayer grown by MOCVD[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2017,60:66-70
[21] Xia, Xiaochuan, Liang, Hongwei, Geng, Xinlei, Chen, Yuanpeng, Yang, Chao, Liu, Yang, Shen, Rensheng, Xu, Mengxiang, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Synthesis of GaN network by nitridation of hexagonal epsilon-Ga2O3 film[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2017,28(3):2598-2601
[22] Xia, Xiaochuan, Chen, Yuanpeng, Feng, Qiuju, Liang, Hongwei, Tao, Pengcheng, Xu, Mengxiang, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Hexagonal phase-pure wide band gap epsilon-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition[J],APPLIED PHYSICS LETTERS,2016,108(20)
[23] Liang, Hongwei, Du, Guotong, Tao, Pengcheng, Xia, Xiaochuan, Chen, Yuanpeng, Zhang, Kexiong, Liu, Yang, Shen, Rensheng, Luo, Yingmin, Yuantao, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Vertically conducting deep-ultraviolet light-emitting diodes with interband tunneling junction grown on 6H-SiC substrate[J],JAPANESE JOURNAL OF APPLIED PHYSICS,2016,55(3)
[24] Tao, Pengcheng, Luo, Yingmin, Zhang, Yuantao, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, Chen, Yuanpeng, Yang, Chao, Liu, Jianxun, Zhu, Zhifu, Yang, Shen, Rensheng, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Crack-free Al0.5Ga0.5N epilayer grown on SiC substrate by in situ SiNx interlayer[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2016,41:291-296
[25] Liu, Jianxun, Du, Guotong, Liang, Hongwei, Li, Binghui, Yang, Xia, Xiaochuan, Huang, Huolin, Sandhu, Qasim Abbas, Shen, Rensheng, Luo, Yingmin, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Unintentionally doped high resistivity GaN layers with an InGaN interlayer grown by MOCVD[J],RSC ADVANCES,2016,6(65):60068-60073
[26] Liang, Hongwei, Chen, Yuanpeng, Xia, Xiaochuan, Zhang, Chao, Shen, Rensheng, Liu, Yang, Luo, Yingmin, Du, Guotong, XC (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2015,39:582-586
[27] Tao, Pengcheng, Liu, Yang, Jiang, Jianhua, Huang, Huishi, Feng, Qiuju, Shen, Rensheng, Luo, Yingmin, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, 2 Linggong Rd, High Tech Pk, Dalian 116024, Peoples R China..Enhanced output power of near-ultraviolet LEDs with AlGaN/GaN distributed Bragg reflectors on 6H-SiC by metal-organic chemical vapor deposition[J],SUPERLATTICES AND MICROSTRUCTURES,2015,85:482-487
[28] Liang, Hongwei, Chen, Yuanpeng, Xia, Xiaochuan, Feng, Qiuju, Liu, Yang, Shen, Rensheng, Luo, Yingmin, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Influence of Sb valency on the conductivity type of Sb-doped ZnO[J],THIN SOLID FILMS,2015,589:199-202
[29] Chen, Yuanpeng, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, Tao, Pengcheng, Shen, Rensheng, Liu, Yang, Feng, Yanbin, Zheng, Yuehong, Li, Xiaona, XC (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..The lattice distortion of beta-Ga2O3 film grown on c-plane sapphire[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2015,26(5):3231-3235
[30] Cai, Xin, Du, Guotong, Luo, Yingmin, Liu, Yang, Shen, Rensheng, Xia, Xiaochuan, Liang, Hongwei, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Influence of Cu dopant on the structure and optical properties of ZnO thin films prepared by MOCVD[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2015,26(3):1591-1596

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