大连理工大学主页平台管理系统夏晓川--中文主页--论文成果

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夏晓川

学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院

教师拼音名称：xiaxiaochuan
硕士生导师
博士生导师
主要任职：集成电路学院副院长
其他任职：副院长
性别：男
毕业院校：吉林大学
所在单位：集成电路学院
办公地点：大连理工大学开发区校区信息楼211室
联系方式：0411-84707865
电子邮箱：xiaochuan@dlut.edu.cn

论文成果

[31] Chen, Yuanpeng, Liu, Yang, Luo, Yingmin, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, Shen, Rensheng, XC (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Effect of growth pressure on the characteristics of beta-Ga2O3 films grown on GaAs (100) substrates by MOCVD method[J],APPLIED SURFACE SCIENCE,2015,325(C):258-261
[32] Zhang, Kexiong, Du, Guotong, Liang, Hongwei, Wang, Dongsheng, Shen, Rensheng, Guo, Wenping, Deng, Qunxiong, Liu, Yang, Xia, Xiaochuan, Luo, Yingmin, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..The properties of reversed polarization yellow InGaN-GaN MQWs in p-side down structure grown by metal-organic chemical vapor deposition on sapphire substrate[J],PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2014,64:57-62
[33] Tao, Pengcheng, Guo, Wenping, Deng, Qunxiong, Du, Guotong, Liang, Hongwei, Wang, Dongsheng, Xia, Xiaochuan, Feng, Qiuju, Liu, Yang, Shen, Rensheng, Zhang, Kexiong, Luo, Yingmin, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Crack-free AlGaN/GaN distributed Bragg reflectors synthesized by insertion of a thin SiNx interlayer grown on 6H-SiC substrate by metal-organic chemical vapor deposition[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2014,27:841-845
[34] Tao, Pengcheng, Luo, Yingmin, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, Feng, Qiuju, Wang, Dongsheng, Liu, Yang, Shen, Rensheng, Zhang, Kexiong, Cai, Xin, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2014,25(10):4268-4272
[35] Zhang, Kexiong, Luo, Yingmin, Du, Guotong, Liang, Hongwei, Liu, Yang, Tao, Pengcheng, Yang, Chao, Shen, Rensheng, Guo, Wenping, Wang, Dongsheng, Xia, Xiaochuan, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate[J],SCIENTIFIC REPORTS,2014,4:6322
[36] Zhang, Kexiong, Du, Guotong, Liang, Hongwei, Shen, Rensheng, Song, Shiwei, Wang, Dongsheng, Liu, Yang, Xia, Xiaochuan, Yang, Dechao, Luo, Yingmin, KX (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth[J],APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2014,116(4):1561-1566
[37] Yang Dechao, Zhang Yuantao, Du Guotong, Liang Hongwei, Qiu Yu, Li Pengchong, Liu Yang, Shen Rensheng, Xia Xiaochuan, Yu Zhennan, Chang Yuchun, Zhang, YT (reprint author), Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China..Selective Growth of GaN on Slope Cone-shaped Patterned Sapphire Substrate[J],CHEMICAL RESEARCH IN CHINESE UNIVERSITIES,2014,30(4):556-559
[38] Wang, Dongsheng, Liang, Hongwei, Tao, Pengcheng, Zhang, Kexiong, Song, Shiwei, Liu, Yang, Xia, Xiaochuan, Shen, Rensheng, Du, Guotong, HW (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China..Crack-free ultraviolet AlGaN/GaN distributed Bragg reflectors grown by MOVPE on 6H-SiC(0001)[J],SUPERLATTICES AND MICROSTRUCTURES,2014,70:54-60
[39] Zhang Yuan-Tao, Xia Xiao-Chuan, Wu Bin, Shi Zhi-Feng, Yang Fan, Yang Xiao-Tian, Zhang Bao-Lin, Du Guo-Tong, Zhang, YT (reprint author), Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130012, Peoples R China..Electrically Pumped Ultraviolet Random Lasing from p-ZnO:As Based on p-ZnO/N-GaN Heterojunction[J],CHINESE PHYSICS LETTERS,2014,31(5)
[40] Liang, Hongwei, Chen, Yuanpeng, Du, Guotong, Feng, Qiuju, Xia, Xiaochuan, Li, Rong, Guo, Huiying, Xu, Kun, Tao, Pengcheng, QJ (reprint author), Liaoning Normal Univ, Sch Phys & Elect Technol, Dalian 116029, Peoples R China..Room temperature electroluminescence from arsenic doped p-type ZnO nanowires/n-ZnO thin film homojunction light-emitting diode[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2014,25(4):1955-1958
[41] Yang, Dechao, Zhang, Yuantao, Du, Guotong, Liang, Hongwei, Qiu, Yu, Shen, Rensheng, Liu, Yang, Xia, Xiaochuan, Song, Shiwei, Kexiong, Yu, Zhennan, YT (reprint author), Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, 2699 Qianjin St, Changchun 130023, Peoples R China..Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by wet etching[J],APPLIED SURFACE SCIENCE,2014,295:26-30
[42] Zhang, Kexiong, Liang, Hongwei, Shen, Rensheng, Wang, Dongsheng, Tao, Pengcheng, Liu, Yang, Xia, Xiaochuan, Luo, Yingmin, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Negative differential resistance in low Al-composition p-GaN/Mg-doped Al0.15Ga0.85N/n(+)-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate[J],APPLIED PHYSICS LETTERS,2014,104(5)
[43] Wang Dong-Sheng, Zhang Ke-Xiong, Liang Hong-Wei, Song Shi-Wei, Yang De-Chao, Shen Ren-Sheng, Liu Yang, Xia Xiao-Chuan, Luo Ying-Min, Du Guo-Tong, Liang, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Enhanced Output Power of Near-Ultraviolet Light-Emitting Diodes by p-GaN Micro-Rods[J],CHINESE PHYSICS LETTERS,2014,31(2)
[44] Yang, Dechao, Zhang, Kexiong, Yu, Zhennan, Du, Guotong, Liang, Hongwei, Qiu, Yu, Shen, Rensheng, Liu, Yang, Xia, Xiaochuan, Song, Shiwei, GT (reprint author), Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130023, Peoples R China..Improving the quality of GaN epilayer by preparing a novel patterned sapphire substrate[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2014,25(1):267-272
[45] Cheng, Yi, Liang, Hongwei, Liu, Yang, Xia, Xiaochuan, Shen, Rensheng, Song, Shiwei, Wu, Yunfeng, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Influence of N-2 and O-2 annealing treatment on the optical bandgap of polycrystalline Ga2O3:Cu films[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2013,16(5,SI):1303-1307

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