大连理工大学主页平台管理系统夏晓川--中文主页--论文成果

更多

` 中文
- English

夏晓川

学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院

教师拼音名称：xiaxiaochuan
硕士生导师
博士生导师
主要任职：集成电路学院副院长
其他任职：副院长
性别：男
毕业院校：吉林大学
所在单位：集成电路学院
办公地点：大连理工大学开发区校区信息楼211室
联系方式：0411-84707865
电子邮箱：xiaochuan@dlut.edu.cn

论文成果

[46] Zhang, Kexiong, Liang, Hongwei, Song, Shiwei, Yang, Dechao, Shen, Rensheng, Liu, Yang, Xia, Xiaochuan, Luo, Yingmin, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Stress State of GaN Epilayer Grown on Sapphire and 6H-SiC Substrates[J],JOURNAL OF TESTING AND EVALUATION,2013,41(5):798-803
[47] Song, Shiwei, Shen, Rensheng, Liang, Hongwei, Liu, Yang, Xia, Xiaochuan, Zhang, Kexiong, Yang, Dechao, Wang, Dongsheng, Du, Guotong, RS (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Improved quality of GaN epilayer grown on porous SiC substrate by in situ H-2 pre-treatment[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2013,24(9):3299-3302
[48] 宋世巍, 梁红伟, 申人升, 柳阳, 张克雄, 夏晓川, 杜国同, Liang, H.-W.(hwliang@dlut.edu.cn).SiN插入层对GaN外延膜应力和光学质量的影响[J],发光学报,2013,34(8):1017-1021
[49] Cheng, Yi, Du, Guotong, Liang, Hongwei, Shen, Rensheng, Xia, Xiaochuan, Wang, Bo, Liu, Yuanda, Song, Shiwei, Yang, Zhang, Zhenzhong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2013,24(8):2750-2754
[50] Song, Shiwei, Liu, Yang, Liang, Hongwei, Yang, Dechao, Zhang, Kexiong, Xia, Xiaochuan, Shen, Rensheng, Du, Guotong, SW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2013,24(8):2923-2927
[51] Cai, Xin, Liang, Hongwei, Liu, Yuanda, Shen, Rensheng, Xia, Xiaochuan, Yang, Ling, C. C., Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Study of the thermal stability of the H-related donors in high resistivity ZnO:Cu thin films by high-pressure H-2 treatment[J],CHEMICAL PHYSICS LETTERS,2013,579:90-93
[52] Shi, Zhi-Feng, Dong, Xin, Zhang, Bao-Lin, Du, Guo-Tong, Xia, Xiao-Chuan, Zhao, Wang, Wang, Hui, Long, Yuan-Tao, YT (reprint author), Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Qianjin St 2699, Changchun 130012, Peoples R China..Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction[J],NANOSCALE,2013,5(11):5080-5085
[53] Shi, Zhifeng, Zhang, Baolin, Du, Guotong, Dong, Xin, Liang, Hongwei, Yuantao, Wu, Bin, Cai, Xupu, Jinxiang, Xia, Xiaochuan, Wang, Hui, YT (reprint author), Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Qianjin St 2699, Changchun 130012, Peoples R China..Vertical conducting ultraviolet light-emitting diodes based on p-ZnO:As/n-GaN/n-SiC heterostructure[J],APPLIED PHYSICS LETTERS,2013,102(16)
[54] 柯昀洁, 梁红伟, 申人升, 宋世巍, 夏晓川, 张克雄, 杜国同, 柳阳, Liang, H.-W.(hwliang@dlut.edu.cn).喷淋头高度对InGaN/GaN量子阱生长的影响[J],发光学报,2013,34(4):469-473
[55] 杨德超, 梁红伟, 邱宇, 宋世巍, 申人升, 柳阳, 夏晓川, 俞振南, 杜国同, Liang, H.-W.(hwliang@dlut.edu.cn).衬底弯曲度对GaN基LED芯片性能的影响[J],发光学报,2013,34(3):340-344
[56] Zhang, Hezhi, Shen, Rensheng, Liang, Hongwei, Liu, Yuanda, Yang, Xia, Xiaochuan, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..n-ZnO/p-GaN heterojunction light-emitting diodes with a polarization-induced graded-p-AlxGa1-xN electron-blocking layer[J],JOURNAL OF PHYSICS D-APPLIED PHYSICS,2013,46(6)
[57] 梁红伟, 申人升, 柳阳, 夏晓川.Fabrication of High-performance 400 nm Violet Light Emitting Diode[J],CHINESE JOURNAL OF LUMINESCENCE（发光学报）,2013,34(2):225-229
[58] Liu, Yuanda, Liang, Hongwei, Xia, Xiaochuan, Shen, Rensheng, Yang, Bian, Jiming, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Introducing Ga2O3 thin films as novel electron blocking layer to ZnO/p-GaN heterojunction LED[J],APPLIED PHYSICS B-LASERS AND OPTICS,2012,109(4):605-609
[59] Liu, Yuanda, Liang, Hongwei, Xia, Xiaochuan, Bian, Jiming, Shen, Rensheng, Yang, Luo, Yingmin, Du, Guotong, YD (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Rediscovery of the Role of the i-Layer in n-ZnO/SiO2/p-GaN Through Observations from Both the ZnO and GaN Sides[J],JOURNAL OF ELECTRONIC MATERIALS,2012,41(12):3453-3456
[60] 张仕凯, 杜国同, 张宝林, 史志锋, 王辉, 夏晓川, 伍斌, 蔡旭浦, 高榕, 董鑫, Dong, X.(dongx@jlu.edu.cn).Au层退火温度对ZnO/Au/ZnO多层膜的结构、光学及电学性质的影响[J],发光学报,2012,33(9):934-938

共82条 4/6

首页上页下页尾页页

同专业博导

同专业硕导

个人学术主页

扫一扫用手机查看