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Associate Professor Supervisor of Master's Candidates

Paper Publications

[71]顾彪, 徐茵, 肇莹, 秦福文.GaN生长中的等离子体光谱研究[A],1999,124-127
[72]秦福文, 吴爱民, 吴东江, 王叶安.ECR-PEMOCVD生长GaN基掺锰稀磁半导体的研究[A],2006,422-427
[73]王艳艳, 秦福文, 马世猛, 吴爱民, 王叶安.alpha-Al_2O_3上生长GaN过程中氮化的研究[J],红外与激光工程,2007,36(5):721-724
[74]支安博, 秦福文, 白亦真.AZO薄膜作缓冲层对InN低温沉积的影响[A],2011,2
[75]冯庆浩, 秦福文, 吴爱民, 王阳.ECR-PECVD方法低温制备多晶硅薄膜[J],半导体技术,2006,31(5):342-345
[76]Yi, X. Y., Ma, C. Y., Yuan, F., Wang, N., Qin, F. W., Hu, B. C., Zhang, Q. Y., CY (reprint author), Dalian Univ Technol, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116023, Peoples R China..Structural, morphological, photoluminescence and photocatalytic properties of Gd-doped ZnO film...[J],THIN SOLID FILMS,2017,636:339-345
[77]Jing, S., Bai, Y., Qin, F., Xiao, J., Y (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China., Bai, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ.Bias effects on AlMgB thin films prepared by magnetron sputtering[J],SURFACE ENGINEERING,2017,33(8):592-596
[78]Li, Wenbo, Wang, Dejun, Pan, Yan, Yang, Fei, Ling, Fangfang, Zheng, Liu, Xia, Jinghua, Qin, Fuwen, Xiaolin, Liu, Rui, Yongping, Y, Yang, F (reprint author), Global Energy Interconnect Res Inst, Beijing 102211, Peoples R China., State Key Lab Adv Power Transmiss Technol.Passivation effects of phosphorus on 4H-SiC (0001) Si dangling bonds: A first-principles study[J],CHINESE PHYSICS B,2017,26(3)
[79]Li, Xiaoxuan, Bian, Jiming, Wang, Minhuan, Miao, Lihua, Liu, Hongzhu, Qin, Fuwen, Zhang, Yuzhi, Luo, Yingmin, JM (reprint author), Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Realization of nitride-oxide based p-n heterojunctions with the n-VO2/p-GaN/sapphire structure[J],MATERIALS RESEARCH BULLETIN,2016,77:199-204
[80]Liu, Bingbing, Qin, Fuwen, Wang, Dejun, DJ (reprint author), Dalian Univ Technol, Sch Elect Sci & Technol, Fac Elect Informat & Elect Engn, 2 Linggong Rd, Dalian 116024, Peoples R China..Passivation of SiO2/4H-SiC interface defects via electron cyclotron resonance hydrogen-nitrogen...[J],APPLIED SURFACE SCIENCE,2016,364:769-774

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