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Associate Professor Supervisor of Master's Candidates

Paper Publications

[31]周紫光, 刘爱民, 刘维峰, 刘艳红.表面光伏谱在光电材料与器件研究中的应用[J],半导体技术,2009,34(7):679-683,714
[32]吕博嘉, 刘艳红, 刘东平, 刘爱民, 刘韶华, 马腾才.热丝CVD制备微晶硅薄膜的研究[J],真空,2008,45(1):48-50
[33]刘爱民, 刘艳红.Formation of ZnO Thin Film on n-InP(100) by Electrochemical Deposition[J],Chinese Journal of Luminescence,2008,29:283-288
[34]翁占坤, 刘爱民, 刘艳红, 胡增权.n型InP(100)衬底上电沉积氧化锌薄膜的[J],发光学报,2008,29(2):283-288
[35]Weng, Zhankun, Liu, Aimin, Yanhong, Luo, Huijing, Xu, Feng, Liang, Xiuping, Du, Guotong, AM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, State Key Lab Mat Modificat Laser Ion & Electron, Dalian 116024, Peoples R China..Formation of porous InP by cathodic decomposition[J],MICROELECTRONICS JOURNAL,2007,38(12):1191-1195
[36]翁占坤, 申慧娟, 刘爱民, 刘艳红, 徐峰, 罗慧晶.电化学刻蚀制备多孔InP[A],2006,Vol.37:324-325
[37]刘艳红, 赵宇, 王美田, 胡礼中, 马腾才.等离子体加工对器件损伤的两种模式[J],半导体技术,2002,27(5):69-72
[38]朱泳, 刘艳红, 魏希文, 沈光地, 陈建新, 邹德恕.SiGe材料及其在半导体器件中的应用[J],半导体技术,2001,26(8):70-73
[39]刘艳红, 魏希文, 许铭真, 谭长华, Liu, Y.-H..MOS表面反型层少子时变效应研究[J],大连理工大学学报,2000,19(6):661-663
[40]刘艳红, 赵宇, 王美田, 胡礼中, 魏希文.深亚微米MOS器件的物理、结构与工艺[J],半导体杂志,2000,01:35-39

total43 4/5

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