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个人信息Personal Information
工程师
性别：男
毕业院校：大连理工大学
学位：硕士
所在单位：集成电路学院
电子邮箱：lyang@dlut.edu.cn
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- [21]Liu, Yuanda, 梁红伟, 夏晓川, 申人升, 柳阳, 边继明, 杜国同.Introducing Ga2O3 thin films as novel electron blocking layer to ZnO/p-GaN heterojunction LED[J],APPLIED PHYSICS B LASERS AND OPTICS,2022,109(4):605-609
- [22]Chen, Yuanpeng, 杜国同, 梁红伟, 夏晓川, 陶鹏程, 申人升, 柳阳, 冯延宾, Zheng, Yuehong, 李晓娜.The lattice distortion of beta-Ga2O3 film grown on c-plane sapphire[J],JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS,2022,26(5):3231-3235
- [23]陶鹏程, 骆英民, 杜国同, 梁红伟, 夏晓川, 冯秋菊, Wang, Dongsheng, 柳阳, 申人升, 张克雄, Cai, Xin.The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal ...[J],JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS,2022,25(10):4268-4272
- [24]张克雄, 杜国同, 梁红伟, Wang, Dongsheng, 申人升, Guo, Wenping, Deng, Qunxiong, 柳阳, 夏晓川, 骆英民.The properties of reversed polarization yellow InGaN-GaN MQWs in p-side down structure grown by...[J],PHYSICA E,2022,64:57-62
- [25]Liu, Jianxun, Du, Guotong, 梁红伟, Li, Binghui, 柳阳, 夏晓川, 黄火林, Sandhu, Qasim Abbas, 申人升, 骆英民.Unintentionally doped high resistivity GaN layers with an InGaN interlayer grown by MOCVD[J],RSC Advances,2022,6(65):60068-60073
- [26]梁红伟, 杜国同, 陶鹏程, 夏晓川, Chen, Yuanpeng, 张克雄, 柳阳, 申人升, 骆英民, Zhang, Yuantao.Vertically conducting deep-ultraviolet light-emitting diodes with interband tunneling junction ...[J],JAPANESE JOURNAL OF APPLIED PHYSICS,2022,55(3)
- [27]蒋建华, 黄慧诗, 梁红伟, 王东盛, 柳阳, 夏晓川, 申人升.不同电子阻挡层的紫光LED特性研究[J],光电子技术,2022,4:253-257,262
- [28]宋世巍, 柳阳, 梁红伟, 夏小川, 张克雄, 杨德超, 杜国同.低温插入层对绿光LED的发光影响[J],发光学报,2022,6:744-747
- [29]张笑, 柳阳, 申人升, 张玉书, 杜国同.倾斜光纤光栅传感器研究进展[J],半导体光电,2022,31(2):170-174,189
- [30]Liu, Jianxun, 杜国同, 梁红伟, 夏晓川, Abbas, Qasim, 柳阳, 骆英民, Zhang, Yuantao, Yan, Long, 韩旭.Anomalous indium incorporation and optical properties of high indium content InGaN grown by MOC...[J],JOURNAL OF ALLOYS AND COMPOUNDS,2022,735:1239-1244
- [31]梁红伟, Chen, Yuanpeng, 夏晓川, Zhang, Chao, 申人升, 柳阳, 骆英民, 杜国同.A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium...[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2022,39:582-586
- [32]Song Shi-Wei, 梁红伟, 柳阳, 夏晓川, 申人升, 骆英民, 杜国同.A Study of GaN Grown on SiH4 Pre-Treated 6H-SiC Substrates[J],Chinese Physics Letters,2022,29(1)
- [33]Cheng, Yi, 杜国同, 梁红伟, 申人升, 夏晓川, Wang, Bo, Liu, Yuanda, Song, Shiwei, 柳阳, 张振中.Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal[J],JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS,2022,24(8):2750-2754
- [34]申人升, 李香萍, 夏晓川, 梁红伟, Wu GuoGuang, 柳阳, 程传辉, 杜国同.Comparative investigation of three types of ethanol sensor based on NiO-SnO2 composite nanofibe...[J],科学通报,2022,57(17):2087-2093
- [35]陶鹏程, 骆英民, Zhang, Yuantao, 杜国同, 梁红伟, 夏晓川, Chen, Yuanpeng, 杨超, Liu, Jianxun, Zhu, Zhifu, 柳阳, 申人升.Crack-free Al0.5Ga0.5N epilayer grown on SiC substrate by in situ SiNx interlayer[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2022,41:291-296
- [36]陶鹏程, Guo, Wenping, Deng, Qunxiong, 杜国同, 梁红伟, Wang, Dongsheng, 夏晓川, 冯秋菊, 柳阳, 申人升, 张克雄, 骆英民.Crack-free AlGaN/GaN distributed Bragg reflectors synthesized by insertion of a thin SiNx inter...[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2022,27:841-845
- [37]Liu, Yuanda, 杜国同, 梁红伟, Xu, Lu, Zhao, Jianze, 边继明, 骆英民, 柳阳, Li, Wancheng, Wu, Guoguang.Cu related doublets green band emission in ZnO:Cu thin films[J],JOURNAL OF APPLIED PHYSICS,2022,108(11)
- [38]Wang, Dongsheng, 梁红伟, 陶鹏程, 张克雄, Song, Shiwei, 柳阳, 夏晓川, 申人升, 杜国同.Crack-free ultraviolet AlGaN/GaN distributed Bragg reflectors grown by MOVPE on 6H-SiC(0001)[J],SUPERLATTICES AND MICROSTRUCTURES,2022,70:54-60
- [39]石建军, 夏晓川, 阿巴斯, 刘俊, 张贺秋, 柳阳, 梁红伟.Current transport mechanism of Mg/Au ohmic contacts to lightly doped n-type beta-Ga2O3[J],Journal of Semiconductors,2022,40(1):12805-
- [40]梁红伟, 柳阳, 杜国同.Cu掺杂ZnO 的光致发光光谱[J],材料导报,2022,25(2):36-42