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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：德国卡尔斯鲁厄工业大学
学位：博士
所在单位：材料科学与工程学院
学科：材料物理与化学. 微电子学与固体电子学
办公地点：辽宁省大连市高新园区凌工路2号
大连理工大学新三束实验室412
电子邮箱：zhoudayu@dlut.edu.cn
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- [81]Yao, Yifan, 周大雨, Li, Shuaidong, Wang, Jingjing, Sun, Nana, 刘峰, 赵秀明.Experimental evidence of ferroelectricity in calcium doped hafnium oxide thin films[J],JOURNAL OF APPLIED PHYSICS,2019,126(15)
- [82]李帅东, 周大雨, 徐进, 石志鑫, Uwe Schr?der.HfO2基铁电薄膜在循环电场载荷下的极化翻转行为[J],湘潭大学自然科学学报,2019,41(5):104-120
- [83]叶飞, 肖海珠, 周大雨.H fO 2铁电相与四方相转变关系的第一性原理研究[J],功能材料,2014,16:16070-16073
- [84], 周大雨, 李爱魁.Sputtered titanium nitride films with finely tailored surface activity and porosity for high perf...[J],Journal of Power Sources,2021,489(229406)
- [85]李帅东, 周大雨, 石志鑫, Michael Hoffmann, Thomas Mikolajick, Uwe Schroeder.Involvement of Unsaturated Switching in the Endurance Cycling of Si-doped HfO2 Ferroelectric Thin...[J],ADVANCED ELECTRONIC MATERIALS,2021,6(8):2000264-
- [86]Ali, Faizan, 周大雨, Mohsin, Hafiz Waqas, Daaim, Muhammad, Khan, Sheeraz, Hussain, Muhammad Muzammal, Sun, Nana.Recent Progress on Energy-Related Applications of HfO2-Based Ferroelectric and Antiferroelectri...[J],ACS APPLIED ELECTRONIC MATERIALS,2021,2(8):2301-2317
- [87]Zhou, Dayu, Mikolajick, T., Schroeder, U., Xu, Jin, Heitmann, J., Jegert, G., Weinreich, W., Kerber, M., Knebel, S., Erben, E., DY (reprint author), Dalian Univ Technol, Sch Mat Sci & Engn, 2 Linggong Rd, Dalian 116024, Liaoning, Peoples R China..Reliability of Al2O3-doped ZrO2 high-k dielectrics in three-dimensional stacked metal-insulator...[J],JOURNAL OF APPLIED PHYSICS,2010,108(12)
- [88]Zhou, Dayu, Mueller, J., Xu, Jin, Knebel, S., Braeuhaus, D., Schroeder, U., DY (reprint author), Dalian Univ Technol, Sch Mat Sci & Engn, 2 Linggong Rd, Dalian 116024, Peoples R China..Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin film...[J],APPLIED PHYSICS LETTERS,2012,100(8)
- [89]Zhou, Dayu, Xu, Jin, Li, Qing, Guan, Yan, Cao, Fei, Dong, Xianlin, Mueller, Johannes, Schenk, Tony, Schroeder, Uwe, DY (reprint author), Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116024, Peoples R China..Wake-up effects in Si-doped hafnium oxide ferroelectric thin films[J],APPLIED PHYSICS LETTERS,2013,103(19)
- [90]Zhou, Dayu, Schroeder, Uwe, Guan, Yan, Vopson, Melvin M., Xu, Jin, Liang, Hailong, Cao, Fei, Dong, Xianlin, Mueller, Johannes, Schenk, Tony, DY (reprint author), Dalian Univ Technol, Sch Mat Sci & Engn, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China..Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ...[J],ACTA MATERIALIA,2015,99:240-246
- [91]Yao, Yifan, Wang, Jingjing, Sun, Nana, Liu, Feng, Zhao, Xiuming, Zhou, Dayu, Li, Shuaidong, DY (reprint author), Dalian Univ Technol, Sch Mat Sci & Engn, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China..Experimental evidence of ferroelectricity in calcium doped hafnium oxide thin films[J],JOURNAL OF APPLIED PHYSICS,2019,126(15)
- [92]Liu, Xiaohua, Zhou, Dayu, Guan, Yan, Li, Shuaidong, Cao, Fei, Dong, Xianlin, DY (reprint author), Dalian Univ Technol, Sch Mat Sci & Engn, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China..Endurance properties of silicon-doped hafnium oxide ferroelectric and antiferroelectric-like th...[J],ACTA MATERIALIA,2018,154:190-198
- [93]Ali, Faizan, Dong, Xianlin, Liu, Xiaohua, Zhou, Dayu, Yang, Xirui, Xu, Jin, Schenk, Tony, Mueller, Johannes, Schroeder, Uwe, Cao, Fei, DY (reprint author), Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Sch Mat Sci & Engn, Dalian 116024, Peoples R China..Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage[J],JOURNAL OF APPLIED PHYSICS,2017,122(14)
- [94]Guan, Yan, Zhou, Dayu, Xu, Jin, Liu, Xiaohua, Cao, Fei, Dong, Xianlin, Mueller, Johannes, Schenk, Tony, Schroeder, Uwe, DY (reprint author), Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Sch Mat Sci & Engn, Dalian 116024, Peoples R China..The Rayleigh law in silicon doped hafnium oxide ferroelectric thin films[J],PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,2015,9(10):589-593
- [95]徐军, 周大雨, 陆文琪.Structrual and Electrical Properties of Reactive Magnetron Sputtered Yttrium-doped HfO2 Films[J],Chinese Physics B,2018,27(4):481031-481036
- [96]Liang, Hailong, Xu, Jin, Zhou, Dayu, Wang, Xuexia, Liu, Xiaohua, Chu, Shichao, Xiaoying, DY (reprint author), Dalian Univ Technol, Minist Educ, Key Lab Mat Modificat Laser Ion & Elect Beams, Dalian 116024, Peoples R China..Structure and electrical properties of pure and yttrium-doped HfO2 films by chemical solution d...[J],MATERIALS & DESIGN,2017,120:376-381
- [97]Yan, Yong, Zhou, Dayu, Guo, Chunxia, Xu, Jin, Yang, Xirui, Liang, Hailong, Fangyang, Chu, Shichao, Liu, Xiaoying, DY (reprint author), Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R China., Zhou, Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054.Thickness-dependent phase evolution and dielectric property of Hf0.5Zr0.5O2 thin films prepared...[J],JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY,2016,77(2):430-436
- [98]Zhang, Yu, Xu, Jun, Zhou, Da-Yu, Wang, Hang-Hang, Lu, Wen-Qi, Choi, Chi-Kyu, J (reprint author), Dalian Univ Technol, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China..Effects of Hf buffer layer at the Y-doped HfO2/Si interface on ferroelectric characteristics of...[J],CERAMICS INTERNATIONAL,2018,44(11):12841-12846
- [99]Zhang, Yu, Xu, Jun, Zhou, Da-Yu, Wang, Hang-Hang, Lu, Wen-Qi, Choi, Chi-Kyu, J (reprint author), Dalian Univ Technol, Minist Educ, Sch Phys, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China..Structural and electrical properties of reactive magnetron sputtered yttrium-doped HfO2 films[J],CHINESE PHYSICS B,2018,27(4)
- [100]Sun, Nana, Xu, Jin, Zhou, Dayu, Zhao, Peng, Li, Shuaidong, Wang, Jingjing, Chu, Shichao, Ali, Faizan, DY (reprint author), Dalian Univ Technol, Sch Mat Sci & Engn, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China..DC reactively sputtered TiNx thin films for capacitor electrodes[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2018,29(12):10170-10176