![]()
秦福文
-
副教授
硕士生导师
- 性别：男
- 毕业院校：大连理工大学
- 学位：博士
- 所在单位：物理学院
- 学科：凝聚态物理
- 办公地点：科技园c座303-2
- 联系方式：qfw@dlut.edu.cn
- 电子邮箱：qfw@dlut.edu.cn
访问量：
-
[61] Gu, B, Xu, Y, Qin, FW, Wang, SS, Sui, ZG, B (reprint author), Dalian Univ Technol, State Key Lab Mat Modificat Laser Ion & Elect Bea, Dept Electromagnet Engn, Dalian 116024, Peoples R China..ECR plasma in growth of cubic GaN by low pressure MOCVD[J],PLASMA CHEMISTRY AND PLASMA PROCESSING,2002,22(1):159-174
-
[62] Xu, Y, Gu, B, Qin, FW, Y (reprint author), Dalian Univ Technol, State Key Lab Mat Modificat 3 Beams, Dalian 116024, Peoples R China..Electron cyclotron resonance plasma enhanced metalorganic chemical vapor deposition system with mo[J],JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,2004,22(2):302-308
-
[63] 王三胜, 顾彪, 徐茵, 秦福文, 隋郁, 杨大智.用N2-H2等离子体氮化GaAs衬底对ECR-PEMOCVD生长立方GaN的影响[J],发光学报,2001,22(z1):24-28
-
[64] 王三胜, 顾彪, 徐茵, 徐久军, 秦福文, 杨大智.ECR-PEMOCVD法在GaAs(001)衬底上制备GaN量子点[J],半导体光电,2002,23(2):114-117
-
[65] 徐茵, Wang Sansheng, 顾彪, 秦福文, 李晓娜, 王三胜, XU Yin, GU Biao, Qin Fuwen, Li Xiaona, Xu, Y..GaN在Si(001)上的ECR等离子体增强MOCVD直接生长研究[J],半导体学报,2002,23(12):1238-1244
-
[66] 秦福文, 杨大智, 徐茵, 顾彪, Qin, FW (reprint author), Dalian Univ Technol, Natl Lab Mat Modificat 3 Beams, Dalian 116024, Peoples R China..氮化铝单晶薄膜的ECR-PEMOCVD低温生长研究[J],物理学报,2003,52(5):1240-1244
-
[67] 秦福文, 顾彪, 徐茵, 杨大智.蓝宝石衬底的ECR等离子体清洗与氮化的RHEED研究[J],半导体学报,2003,24(6):668-672
-
[68] Liu, Bingbing, Huang, Lingqin, Zhu, Qiaozhi, Qin, Fuwen, Wang, Dejun, DJ (reprint author), Dalian Univ Technol, Fac Elect Informat & Elect Engn, Sch Elect Sci & Technol, Dalian 116024, Peoples R China..Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma (vol 104, [J],APPLIED PHYSICS LETTERS,2014,104(26)
-
[69] Gu, B, Xu, Y, Qin, FW, Wang, SS.Plasma pretreatment of GaAs substrates and ECR-PAMOCVD of cubic GaN[A],1998,524-527
-
[70] Qin, Fu-wen, He, Huan, Jiang, Xin, Xu, Yin, Gu, Biao, Wu, Ai-min.Growth and its properties of GaMnN film based on ECR-PEMOCVD[A],2007,561-565(PART 2):1193-1196
-
[71] 顾彪, 徐茵, 肇莹, 秦福文.GaN生长中的等离子体光谱研究[A],1999,124-127
-
[72] 秦福文, 吴爱民, 吴东江, 王叶安.ECR-PEMOCVD生长GaN基掺锰稀磁半导体的研究[A],2006,422-427
-
[73] 王艳艳, 秦福文, 马世猛, 吴爱民, 王叶安.alpha-Al_2O_3上生长GaN过程中氮化的研究[J],红外与激光工程,2007,36(5):721-724
-
[74] 支安博, 秦福文, 白亦真.AZO薄膜作缓冲层对InN低温沉积的影响[A],2011,2
-
[75] 冯庆浩, 秦福文, 吴爱民, 王阳.ECR-PECVD方法低温制备多晶硅薄膜[J],半导体技术,2006,31(5):342-345
-
[76] Yi, X. Y., Ma, C. Y., Yuan, F., Wang, N., Qin, F. W., Hu, B. C., Zhang, Q. Y., CY (reprint author), Dalian Univ Technol, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116023, Peoples R China..Structural, morphological, photoluminescence and photocatalytic properties of Gd-doped ZnO films[J],THIN SOLID FILMS,2017,636:339-345
-
[77] Jing, S., Bai, Y., Qin, F., Xiao, J., Y (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China., Bai, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ.Bias effects on AlMgB thin films prepared by magnetron sputtering[J],SURFACE ENGINEERING,2017,33(8):592-596
-
[78] Li, Wenbo, Wang, Dejun, Pan, Yan, Yang, Fei, Ling, Fangfang, Zheng, Liu, Xia, Jinghua, Qin, Fuwen, Xiaolin, Liu, Rui, Yongping, Y, Yang, F (reprint author), Global Energy Interconnect Res Inst, Beijing 102211, Peoples R China., State Key Lab Adv Power Transmiss Technol.Passivation effects of phosphorus on 4H-SiC (0001) Si dangling bonds: A first-principles study[J],CHINESE PHYSICS B,2017,26(3)
-
[79] Li, Xiaoxuan, Bian, Jiming, Wang, Minhuan, Miao, Lihua, Liu, Hongzhu, Qin, Fuwen, Zhang, Yuzhi, Luo, Yingmin, JM (reprint author), Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Realization of nitride-oxide based p-n heterojunctions with the n-VO2/p-GaN/sapphire structure[J],MATERIALS RESEARCH BULLETIN,2016,77:199-204
-
[80] Liu, Bingbing, Qin, Fuwen, Wang, Dejun, DJ (reprint author), Dalian Univ Technol, Sch Elect Sci & Technol, Fac Elect Informat & Elect Engn, 2 Linggong Rd, Dalian 116024, Peoples R China..Passivation of SiO2/4H-SiC interface defects via electron cyclotron resonance hydrogen-nitrogen mi[J],APPLIED SURFACE SCIENCE,2016,364:769-774
