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秦福文
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副教授
硕士生导师
- 性别：男
- 毕业院校：大连理工大学
- 学位：博士
- 所在单位：物理学院
- 学科：凝聚态物理
- 办公地点：科技园c座303-2
- 联系方式：qfw@dlut.edu.cn
- 电子邮箱：qfw@dlut.edu.cn
访问量：
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[81] 秦福文, 王德君.碳化硅MOS器件氧化层界面附近碳存在形式的理论研究进展[J],智能电网,2016,6(1):12-17
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[82] 王晓琳, 刘冰冰, 秦福文, 王德君, Wang, D., School of Electronic Science, Technology, Faculty of Electronic Information, Electrical Engineering, Dalian University of TechnologyChina, email: dwang121@dlut.edu.cn.氮氢混合等离子体处理对SiC MOS电容可靠性的影响[J],固体电子学研究与进展,2016,36(1):71-77
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[83] Zhao, J., Qin, F., Bai, Y., Wang, H., Kang, R., Pang, Jing, S., F (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..GaN Films deposited on ITO coated glass[J],SURFACE ENGINEERING,2015,31(7):534-539
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[84] 李慧, 吴爱民, 张文兰, 陆文琪, 秦福文, 董闯, Wu, Aimin.线形同轴耦合微波等离子体诊断及硅薄膜制备[J],哈尔滨工程大学学报,2015,36(3):423-426
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[85] 汤斌, 刘冰冰, 刘道森, 秦福文, 王德君, 李文波, Wang, D., Faculty of Electronic Information, Electrical Engineering School of Electronic Science, Technology, Dalian University of TechnologyChina.电子回旋共振氮等离子体氧化后退火对4H-SiC MOS电容TDDB特性的影响[J],固体电子学研究与进展,2015,35(2):191
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[86] 刘冰冰, 秦福文, 王德君.氢氮等离子体表面预处理改善SiO2/SiC界面特性[A],2015,118-119
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[87] 秦福文, 王德君.Enhanced TiC/SiC Ohmic contacts by electronic cyclotron resonance hydrogen plasma pretreatment and l[J],Applied Surface Science,2015,355(11):59-63
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[88] Kang, R. F., Bai, Y. Z., Qin, F. W., Zhao, Y., Pang, J. Q., J., YZ (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Effect of deposition pressure on mechanical properties of Al-Mg-B thin films[J],SURFACE ENGINEERING,2014,30(12):900-904
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[89] Bian, Jiming, Miao, Lihua, Qin, Fuwen, Zhang, Dong, Liu, Weifeng, Hongzhu, FW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Liaoning, Peoples R China..Low-temperature ECR-PEMOCVD deposition of high-quality crystalline gallium nitride films: A compar[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2014,26(1):182-186
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[90] Bian Jiming, Wang Yuxin, Qin Fuwen, Zhang Yuzhi, Fu Xianping, Luo Yingmin, Ma Xiaowen, Sun Jingchang, Zhang Zhikun, Bian, JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..ZnO Films on Transferable and Low Thermal Resistance Graphite Substrate Grown by Ultrasonic Spray [J],JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION,2014,29(3):428-432
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[91] Liu, Bingbing, Huang, Lingqin, Zhu, Qiaozhi, Qin, Fuwen, Wang, Dejun, DJ (reprint author), Dalian Univ Technol, Sch Elect Sci & Technol, Fac Elect Informat & Elect Engn, Dalian 116024, Peoples R China..Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma[J],APPLIED PHYSICS LETTERS,2014,104(20)
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[92] Bian, Ji Ming, Qin, Fu Wen, Zhong, Miao Miao.Influence of nitridation time on the characteristics of GaN films deposited on ni metal substrate by[A],2014,912-914:210-213
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[93] Qin, Fu-Wen, Zhong, Miao-Miao, Liu, Yue-Mei, Wang, Hui, Bian, Ji-Ming, Chong, Zhao, Yue, Zhang, Dong, Li, Qin-ming, JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Growth of high c-orientated crystalline GaN films on amorphous Cu/glass substrates with low-temper[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2014,25(2,SI):969-973
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[94] Zhang, Zhikun, Bian, Jiming, Yuzhi, Junfeng, Qin, Fuwen, Luo, Yingmin, JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Ultra-low threshold optically pumped random laser emission behavior of highly oriented pyrolytic g[J],MATERIALS LETTERS,2014,115:261-264
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[95] Zhong, M. M., Qin, F. W., Liu, Y. M., Wang, C., Bian, J. M., E. P., H., Zhang, D., JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Low-temperature growth of high c-orientated crystalline GaN films on amorphous Ni/glass substrates[J],JOURNAL OF ALLOYS AND COMPOUNDS,2014,583:39-42
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[96] 秦福文, 王德君.Publishers Note: Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed pl[J],Applied Physics Letters,2014,104(26):269902-269902
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[97] 边继明, 秦福文.Influence of Nitridation Time on the Characteristics of GaN Films Deposited on Ni Metal Substrate by[J],Advanced Materials Research,2014,912(4):210-213
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[98] 边继明, 秦福文.In-Situ AlN Induced Valence State Variation of V in Vanadium Oxide Films Investigated by XPS[J],Journal of Material Science and Technology Research,2014,1(1):15-21
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[99] 边继明, 秦福文.A comparative study of intermediate layers for the growth of high crystalline GaN films on amorphous[J],Materials Science in Semiconductor Processing,2014,26(c):182-186
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[100] Zhu, Qiaozhi, Qin, Fuwen, Li, Wenbo, Wang, Dejun, DJ (reprint author), Dalian Univ Technol, Sch Elect Sci & Technol, Fac Elect Informat & Elect Engn, Dalian 116024, Peoples R China..Electrical and physical properties of 4H-SiC MOS interface with electron cyclotron resonance micro[J],PHYSICA B-CONDENSED MATTER,2014,432:89-95
