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秦福文
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副教授
硕士生导师
- 性别：男
- 毕业院校：大连理工大学
- 学位：博士
- 所在单位：物理学院
- 学科：凝聚态物理
- 办公地点：科技园c座303-2
- 联系方式：qfw@dlut.edu.cn
- 电子邮箱：qfw@dlut.edu.cn
访问量：
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[141] 秦福文.Influence of N2 flux on film deposition on sapphire(0001) substrates by ECR－PEMOCVD[J],中国物理快报（英文版）,2011,28(2):281021-281024
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[142] 秦福文, 边继明, 吴爱民.The Preparation and Charateristics of InxGa1-xN（0.06 ≤x≤ 0.58） Films[J],中国物理快报,2011,28(10):108104-108104
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[143] 白亦真, 秦福文, 边继明.Deposition and properties of highly C-oriented GaN films[J],Applied physics A,2011,102(2):353-358
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[144] 秦福文, 白亦真, 边继明.Influence of N2 Flux on the Improvement of Highly c-oriented GaN Films on Diamond Substrates[J],Vacuum,2011,85(7):725-729
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[145] 张东, 秦福文, 白亦真, 王健, 周志峰, 于博.Influence of N2 Flux on the Improvement of Highly c-oriented GaN Films on[J],Vacuum,2011,85(7):725-729
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[146] 刘胜芳, 秦福文, 吴爱民, 姜辛, 徐茵, 顾彪, Liu, S., Key Lab. of Materials Modification by Laser, Ion, Electron Beam, Dalian University of Technology, Dalian 116023, China, email: lsf1201@yahoo.com.cn.在镀铝玻璃衬底上低温沉积GaN薄膜的结晶特性[J],半导体光电,2010,31(4):557-562
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[147] Wu, A. M., Yue, H. Y., Zhang, X. Y., Qin, F. W., Li, T. J., Jiang, X..Synthesis and Its Characteristic of Silicon Nitride Film Deposited by ECR-PECVD at Low Temperature[A],2010,654-656:1712-+
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[148] Qin, Fu-Wen, Wu, Ai-min, Liu, Feng-chun, Bao-dan, Jiang, Xin.Effect of Nitridation on GaN Film Grown on Glass Substrate by ECR-PEMOCVD Method[A],2010,654-656:1716-+
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[149] 陈伟绩, 秦福文, 吴爱民, 刘胜芳, 杨智慧, 姜辛, 李帅, 董武军, Qin, F.(qfw@dlut.edu.cn).TMGa流量对玻璃衬底上低温沉积GaN的影响[J],真空科学与技术学报,2010,30(4):445-449
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[150] 杨智慧, 秦福文, 吴爱民, 宋世巍, 刘胜芳, 陈伟绩, Qin, F.-W.(qfw@dlut.edu.cn).ZnO:Al衬底上低温生长GaN薄膜[J],人工晶体学报,2010,39(2):299-303
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[151] 白亦真, 边继明, 秦福文.Deposition of GaN Films on Freestanding CVD Thick Diamond Films[J],Materials Science Forum,2010,654(1):1740-1743
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[152] 白亦真, 秦福文, 边继明, 赵纪军.Preparation and Characteristics of GaN Films on Freestanding CVD Thick[J],Chinese Physics Letters,2010,27(1):181021-181024
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[153] Zhang Dong, Bai Yi-Zhen, Qin Fu-Wen, Bian Ji-Ming, Jia Fu-Chao, Wu Zhan-Ling, Zhao Ji-Jun, Jiang Xin, Bai, YZ (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Preparation and Characteristics of GaN Films on Freestanding CVD Thick Diamond Films[J],CHINESE PHYSICS LETTERS,2010,27(1)
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[154] 王德君, 王槿, 陈素华, 朱巧智, 秦福文, Wang, D., School of Electronic, Information Engineering, Dalian University of Technology, Dalian, Liaoning, 116024, China, email: dwang121@dlut.edu.cn.TiC/n型4H-SiC欧姆接触的低温退火研究[J],固体电子学研究与进展,2009,29(4):621-625
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[155] 陈伟绩, 秦福文, 吴爱民, 王文彦, Chen, W.-J..衬底氮化时间对玻璃衬底上低温沉积GaN薄膜结晶性的影响[J],功能材料,2009,40(11):1836-1839
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[156] 张广英, 吴爱民, 秦福文, 姜辛, Zhang, G.-Y..玻璃衬底沉积氮化硅薄膜性能研究[J],哈尔滨工程大学学报,2009,30(11):1331-1334
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[157] 王德君, 朱巧智, 秦福文, 宋世巍, 王晓霞, 高明超, Wang, D., School of Electronic, Information Engineering, Dalian University of Technology, Dalian, Liaoning, 116024, China, email: dwang121@dlut.edu.cn.N型4H-SiC ECR氢等离子体处理研究[J],固体电子学研究与进展,2009,29(3):334-338,416
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[158] 宋世巍, 秦福文, 吴爱民, 何欢, 王叶安, 姜辛, 徐茵, 顾彪, Song, S.-W..基于ECR-PEMOCVD生长的稀磁半导体(Ga,Mn)N的特性[J],功能材料,2009,40(9):1473-1476
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[159] 张广英, 吴爱民, 秦福文, 公发全, 姜辛, Zhang, G.-Y., State Key Lab. of Materials Modification by Laser Ion, Electron Beams, Dalian University of Technology, Dalian 116024, China, email: zhangguangying2005@163.com.氮化硅薄膜的沉积速率和表面形貌[J],半导体光电,2009,30(4):558-561
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[160] 王德君, 朱巧智, 秦福文, 宋世巍, 李剑, Wang, D., School of Electronic, Information Engineering, Dalian University of Technology, Dalian 116024, China, email: dwang121@dlut.edu.cn.SiC MOS界面氮等离子体改性及电学特性评价[J],固体电子学研究与进展,2009,29(2):310-314
